IMPATT Diodes Based on GaAs for Millimeter Wave Applications with Reference to Si

Abstract

The small signal characteristics of DDR IMPATTs based on GaAs designed to operate at mm-wave window frequencies such as 94, 140, and 220 GHz are presented in this chapter. Both the DC and Small signal performance of the above-mentioned devices are investigated by using a small signal simulation technique developed by the authors. The efficiency, output power and power density of GaAs IMPATT is higher than that of Si IMPATT. Results show that the DDR IMPATTs based on GaAs are most suitable for generation of RF power with maximum conversion efficiency up to 220 GHz. The noise behavior of GaAs IMPATT yield less noise as compared to Si IMPATT.

Potentiality of graphene as a base material for impact ionization avalanche transit time diode in high-frequency applications

“…Noise is a very important part of IMPATT research, so the noise properties of graphene have been studied and compared to those of IMPATT diodes made of Si and GaAs [16]. Table 5 5, we can see that the mean square noise voltage per bandwidth (v 2 /df) max peaks are at 85, 108, and 145 GHz for working frequencies of 94, 140, and 220 GHz.…”