Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs

Li, K.; Zhang, En Xia; Gorchichko, Mariia; Wang, Peng Fei; Reaz, Mahmud; Zhao, Simeng E.; Hiblot, Gaspard; Huylenbroeck, Stefaan Van; Jourdain, Anne; Alles, Michael L.; Reed, Robert A.; Fleetwood, D.M.; Schrimpf, Ronald D.

doi:10.1109/tns.2021.3065563

Cited by 10 publications

(7 citation statements)

References 39 publications

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“…. 目前, 国内外仅查到少量关于 SiP单粒子瞬态脉冲 [111] 、总剂量效应 [13,15,16] 、瞬时剂量率效应 [112] 和电磁脉冲效应 [113] 的论文, 还未见更多关于SiP辐射效应的论文.…”

Section: Sip的辐射效应研究现状unclassified

See 1 more Smart Citation

Radiation effects and radiation hardening technology of new microsystems

HE,

CHEN,

HAN

et al. 2024

Sci. Sin.-Phys. Mech. Astron.

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Section: Sip的辐射效应研究现状unclassified

“…Zeng等人 [15] 研究了 500 Gy总剂量辐射对3D-SiP中的硅通孔漏电流和电容特性的影响, 结果表明辐射对TSV的可靠性有明显的影响. 然而, Li等人 [16] 预估TSV工艺可能会改变栅和场氧化层中电荷陷阱的性质, 但实验结果表明影响很小.…”

Section: Sip的辐射效应研究现状unclassified

Radiation effects and radiation hardening technology of new microsystems

HE,

CHEN,

HAN

et al. 2024

Sci. Sin.-Phys. Mech. Astron.

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“…Despite this, TID still affects the low-frequency noise of smaller devices, related to interface traps at the Si/SiO₂ interface and border traps in oxide near the interface (2–3 nm). Some studies have focused on the low-frequency noise of MOSFETs under irradiation [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 ]. However, most of these studies only compared the low-frequency noise of devices before and after irradiation with a certain dose, and few have studied the degradation trend of the low-frequency noise of devices in a wider range of radiation doses.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs

et al. 2023

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In this work, we present new evidence of the physical mechanism behind the generation of low-frequency noise with high interface-trap density by measuring the low-frequency noise magnitudes of partially depleted (PD) silicon-on-insulator (SOI) NMOSFETs as a function of irradiation dose. We measure the DC electrical characteristics of the devices at different irradiation doses and separate the threshold-voltage shifts caused by the oxide-trap charge and interface-trap charge. Moreover, the increased densities of the oxide-trap charge projected to the Si/SiO2 interface and interface-trap charge are calculated. The results of our experiment suggest that the magnitudes of low-frequency noise do not necessarily increase with the increase in border-trap density. A novel physical explanation for the low-frequency noise in SOI-NMOSFETs with high interface-trap density is proposed. We reveal that the presence of high-density interface traps after irradiation has a repressing effect on the generation of low-frequency noise. Furthermore, the exchange of some carriers between border traps and interface traps can cause a decrease in the magnitude of low-frequency noise when the interface-trap density is high.

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“…In 2021, Kan Li studied the TID effect in advanced bulk nMOS and pMOS FinFETs with nearby SiO 2 /HfO 2 gate dielectrics and TSVs. The threshold voltage shifts introduced by TSVs are less than 25 mV [ 15 ]. Thus, the pulse frequency, oxide thickness, the radius of TSVs, and the space between TSVs have been investigated [ 16 , 17 , 18 ].…”

Section: Introductionmentioning

confidence: 99%

Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem

Yang

Shan

et al. 2023

Micromachines

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Radio frequency (RF) systems utilizing through-silicon vias (TSVs) have been widely used in the aerospace and nuclear industry, which means that studying the total ionizing dose (TID) effect on TSV structures has become necessary. To investigate the TID effect on TSV structures, a 1D TSV capacitance model was established in COMSOL Multiphysics (COMSOL), and the impact of irradiation was simulated. Then, three types of TSV components were designed, and an irradiation experiment based on them was conducted, to validate the simulation results. After irradiation, the S21 degraded for 0.2 dB, 0.6 dB, and 0.8 dB, at the irradiation dose of 30 krad (Si), 90 krad (Si), 150 krad (Si), respectively. The variation trend was consistent with the simulation in the high-frequency structure simulator (HFSS), and the effect of irradiation on the TSV component was nonlinear. With the increase in the irradiation dose, the S21 of TSV components deteriorated, while the variation of S21 decreased. The simulation and irradiation experiment validated a relatively accurate method for assessing the RF systems’ performance under an irradiation environment, and the TID effect on structures similar to TSVs in RF systems, such as through-silicon capacitors.

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Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs

Cited by 10 publications

References 39 publications

Radiation effects and radiation hardening technology of new microsystems

Radiation effects and radiation hardening technology of new microsystems

Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs

Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem

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