Impacts of 14 MeV neutron irradiation on electrical and spectral properties of flexible GaInP/GaAs/InGaAs solar cells

Liu, M.Q.; Zhang, S.Y.; Wang, T.B.; Tan, Z.C.; Du, C.H.; Zeng, C.; Aierken, Abuduwayiti

doi:10.1016/j.solmat.2023.112294

Cited by 4 publications

(1 citation statement)

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“…Irradiation with fast neutrons with fluences up to 10 14 cm −2 led to a significant decrease in the light power generated via the InGaAs p-i-n photodiode and to photodiode dark current degradation due to the formation of lattice defects [8]. Neutron irradiation leads to a decrease in the output power of solar cells based on InGaAs due to a decrease in the lifetime of minority charge carriers scattered in traps due to displacement damage [9]. The InGaAs single heterojunction bipolar transistors irradiated up to a 6 × 10 14 cm −2 1 MeV equivalent neutron fluence, showing significant current gain degradation [10].…”

Section: Introductionmentioning

confidence: 99%

Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures

Klochkov,

Yskakov,

Vinichenko

et al. 2023

Materials

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The effect of neutron irradiation on the structural, optical, and electronic properties of doped strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures with a two-dimensional electron gas of different layer constructions were subjected to neutron irradiation in the reactor channel with the fluence range of 2 × 1014 cm−2 ÷ 1.2 × 1016 cm−2. The low-temperature photoluminescence spectra, electron concentration and mobility, and high-resolution X-ray diffraction curves were measured after the deactivation. The paper discusses the effect of neutron dose on the conductivity and optical spectra of structures based on InGaAs quantum wells depending on the doping level. The limiting dose of neutron irradiation was also estimated for the successful utilization of AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs heterostructures in electronic applications.

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Section: Introductionmentioning

confidence: 99%