Impact-parameter dependence of energy loss for 625-keV<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">H</mml:mi></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>ions in Si single crystals

Dygo, A.; Boshart, M.A.; Seiberling, L. E.; Kabachnik, N. M.

doi:10.1103/physreva.50.4979

Cited by 26 publications

(14 citation statements)

References 58 publications

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“…Using the local-density approximation, the spatial variation of the valence-electron contribution was calculated in Ref. 15 for the Si͗100͘ and ͗110͘ directions. According to this work, the energy loss across the Si͗100͘ channel is independent of the ion transverse position ជ to within 15%, leading to a variation of less than 3% for the ratio in Figs.…”

Section: ͑5͒mentioning

confidence: 99%

“…This situation is different for the widest channel, ͗110͘, where the position dependence of the electronic energy loss due to the valence electrons has to be considered. 15 Finally, the last term in Eq. ͑5͒ corresponds to the energy loss due to projectile ionization and excitation.…”

Section: ͑5͒mentioning

confidence: 99%

“…9 A full first-order calculation was only recently used to describe the impact-parameter dependence of the electronic energy loss arising from inner-shell ionization of the target. 15 Such a treatment is reliable for light projectiles at velocities large compared to the mean orbital velocities of the target electron involved. Nowadays the computational power has reached a level where such ab initio calculations may replace previous semiempirical formulas.…”

Section: Introductionmentioning

confidence: 99%

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Angular dependence of the electronic energy loss of 800-keV He ionsalong the Si〈100〉 direction

et al. 1997

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We present measurements of the stopping power of 800-keV 4 He ions channeled along the Si͗100͘ axis, as a function of the incidence angle. We compare the experimental results with theoretical calculations by using the impact-parameter-dependent energy loss obtained from the solution of the time-dependent Schrödinger equation through the coupled-channel method. This nonperturbative calculation provides reliable energy-loss results which are in good agreement with the experimental results. ͓S0163-1829͑97͒08607-4͔

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Section: ͑5͒mentioning

confidence: 99%

Section: ͑5͒mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Angular dependence of the electronic energy loss of 800-keV He ionsalong the Si〈100〉 direction

et al. 1997

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“…[4], the principal points of the procedure are given here along with any differences from the previous experiment. The incident beam of 2.5-MeV He+ ions was produced by the University of Florida 3.5-MV Van de Graaff accelerator and collimated to a cross-sectional area of 0.8 XO.…”

mentioning

confidence: 99%

“…Recently, we reported on the impact-parameter dependence of energy loss for 62S-keV H+ ions in Si single crystals [4]. Experimental energy distributions were obtained in the transmission geometry by scattering from a thin gold layer on the beam-exit side.…”

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confidence: 99%

Energy-loss distributions for 2.5-MeVHe+ions incident on Si single crystals

1995

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The energy distributions for 2.5-MeV He ions incident on thin Si single crystals are studied. Detailed angular scans are taken through the (110) and ( 100) axial directions along the [111]and [ 110] planar directions as well as perpendicular to the planar directions for Si(110) (0.74-and 1.4-pm-thick) and Si(100) (0.75-pm-thick) samples, respectively. Complex structures in the distributions are observed throughout the angular scans. The experimental distributions are reasonably well reproduced by a Monte Carlo simulation using the semiclassical approximation [N. M. Kabachnik, V. N. Kondratev, and O. V. Chumanova, Phys. Status Solidi 8 145, 103 (1988)] for energy loss to core electrons and the twocomponent free-electron-gas model for energy loss to valence electrons. Systematic deviations between theory and experiment are observed and discussed in terms of an increased penetration depth necessary for He+ ions to become fully ionized when channeled. PACS number{s): 61.80.Mk, 34.50.8w, 79.20.Rf, 61.80.Jh Investigations of energy-loss processes for ions interacting in single crystals have focused primarily on major axial and planar directions. This is due to a markedly reduced energy loss suffered by penetrating ions aligned with these high-symmetry directions over energy loss suffered when aligned with low symmetry ("random") directions [1]. The primary means of analysis of these early studies has been the peak or leading-edge value of the observed energy distributions [2]. This gives a narrow view of the impact-parameter dependence of the energy loss as essentially only impact parameters close to the channel radius are being explored. A much better method is to model individual trajectories in the crystal by the Monte Carlo technique, attempting to fit the full experimental distributions, not just peak or leading edge values, allowing a study over a broader range of impact parameters. Furthermore, by tilting the crystal away from the axial (planar) direction, smaller impact parameters play an increasingly important role and complex structures can be obtained in the energy distributions [3]. The energy-loss model thus proposed should be valid for impact parameters that span the channel radius rather than just near the channel center. Recently, we reported on the impact-parameter dependence of energy loss for 62S-keV H+ ions in Si single crystals [4]. Experimental energy distributions were obtained in the transmission geometry by scattering from a thin gold layer on the beam-exit side. Angular scans were taken through the ( 110) and ( 100) axial directions along the I111I and I 110I planar directions as well as perpendicular to the planar directions for Si(110) and Si(100), respectively. The energy distributions were very well reproduced by the corresponding Monte Carlo simulation when the semiclassical approximation (SCA) of Kabachnik, Kondratev, and Chumanova [5] was used to describe the energy loss to core electrons and the free-'On leave from the Soltan Institute for Nuclear Studies, Warsaw, Poland.electron-...

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A channeled ion energy loss study of the surfactant-mediated growth of Ge on Si(100)

1996

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Impact-parameter dependence of energy loss for 625-keVH+ions in Si single crystals

Cited by 26 publications

References 58 publications

Angular dependence of the electronic energy loss of 800-keV He ionsalong the Si〈100〉 direction

Angular dependence of the electronic energy loss of 800-keV He ionsalong the Si〈100〉 direction

Energy-loss distributions for 2.5-MeVHe+ions incident on Si single crystals

A channeled ion energy loss study of the surfactant-mediated growth of Ge on Si(100)

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