Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature

Machida, Emi; Horita, Masahiro; Yamaguchi, Koji; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

doi:10.1109/jdt.2012.2236883

Cited by 3 publications

(2 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Actually, the crystallization method could be applicable to form poly-Si on a flexible substrate of polyethylene terephthalate. 60) Therefore, we believe that these results open up a higher degree of freedom for the fabrication of thin-film TEGs, not only on a Si chip, but on flexible substrates such as glass, plastic and paper.…”

mentioning

confidence: 87%

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge_1-xSn_x on SiO₂ fabricated by a low thermal budget process

Takahashi

Ikenoue

Sakashita

et al. 2019

Appl. Phys. Express

View full text Add to dashboard Cite

A thin-film thermoelectric generator composed of p- and n-type poly-Ge1−x Sn x (x ∼ 0.02) on a Si(001) covered with SiO2 has been successfully fabricated by low thermal budget processes (under 300 °C) and demonstrated for the first time. Both the crystallization and dopant activation were simultaneously performed using pulsed UV laser irradiation in flowing water. A recorded activation ratio of Sb in the poly-Ge1−x Sn x enabled a relatively high power factor (9.2 μ Wcm−1 K−2 at RT), which is comparable to the counterparts of n-type Ge1−x Sn x layers epitaxially grown on InP(001).

show abstract

mentioning

confidence: 87%

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge_1-xSn_x on SiO₂ fabricated by a low thermal budget process

Takahashi

Ikenoue

Sakashita

et al. 2019

Appl. Phys. Express

View full text Add to dashboard Cite

show abstract

“…11,12) It also achieves high dopant activation through the recrystallization of ionimplanted single-crystal Si 13,14) and Ge. [15][16][17] Furthermore, Machida and coworkers reported the large-grain formation in poly-Si films on insulators using PLA in flowing water 18,19) even on polyethylene terephthalate substrates, which enhances carrier mobility in poly-Si.…”

Section: Introductionmentioning

confidence: 99%

Dopant behavior in heavily doped polycrystalline Ge₁₋_xSn_xlayers prepared with pulsed laser annealing in water

Takahashi

Kurosawa

Ikenoue

et al. 2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

A low-temperature process for the formation of heavily doped polycrystalline Ge (poly-Ge) layers on insulators is required to realize nextgeneration electronic devices. In this study, we have systematically investigated pulsed laser annealing (PLA) in flowing water for heavily doped amorphous Ge 1%x Sn x layers (x ? 0.02) with various dopants such as B, Al, Ga, In, P, As, and Sb on SiO 2 . It is found that the dopant density after PLA with a high laser energy is reduced when the oxidized dopant has a lower oxygen chemical potential than H 2 O. As a result, for the p-type doping of B, Al, Ga, and In, we obtained a high Hall hole density of 5 ' 10 19 cm %3 for PLA with a low energy. Consequently, the Hall hole mobility is limited to as low as 10 cm 2 V %1 s %1 . In contrast, for As and Sb doping, because the density of substitutional dopants does not decrease even after PLA with a high energy, we achieved a high Hall electron density of 6 ' 10 19 cm %3 and a high Hall electron mobility simultaneously. These results indicate that preventing the oxidation of dopant atoms by water is an important factor for achieving heavy doping using PLA in water.

show abstract

Simulation Study of a High-Current and Fast Dual-Gate IGBT Device With High-<inline-formula> <tex-math notation="LaTeX">$K$ </tex-math> </inline-formula> Material

2016

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature

Cited by 3 publications

References 18 publications

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge_1-xSn_x on SiO₂ fabricated by a low thermal budget process

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge_1-xSn_x on SiO₂ fabricated by a low thermal budget process

Dopant behavior in heavily doped polycrystalline Ge₁₋_xSn_xlayers prepared with pulsed laser annealing in water

Simulation Study of a High-Current and Fast Dual-Gate IGBT Device With High-<inline-formula> <tex-math notation="LaTeX">$K$ </tex-math> </inline-formula> Material

Contact Info

Product

Resources

About

Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature

Cited by 3 publications

References 18 publications

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process

Dopant behavior in heavily doped polycrystalline Ge1−xSnxlayers prepared with pulsed laser annealing in water

Simulation Study of a High-Current and Fast Dual-Gate IGBT Device With High-<inline-formula> <tex-math notation="LaTeX">$K$ </tex-math> </inline-formula> Material

Contact Info

Product

Resources

About

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge_1-xSn_x on SiO₂ fabricated by a low thermal budget process

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge_1-xSn_x on SiO₂ fabricated by a low thermal budget process

Dopant behavior in heavily doped polycrystalline Ge₁₋_xSn_xlayers prepared with pulsed laser annealing in water