Abstract:We investigated the impact of tungsten contamination on minority-carrier recombination lifetime, the photodiode dark/photo current and sensitivity of a pinned photodiode, and the sensing margin of a CMOS image sensor (CIS) cell. After an intentional tungsten contamination and followed by driving at 800 °C for 30 min, tungsten contaminant were located from the surface to p-and n-type regions of a photodiode. The tungsten contamination degraded minority-carrier recombination life-time and the dark current and se… Show more
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