Impact of third-order dispersion and three-photon absorption on mid-infrared time magnification via four-wave mixing in Si<sub>0.8</sub>Ge<sub>0.2</sub> waveguides

Zheng, Aihu; Sun, Qibing; Wang, Leiran; Liu, Mulong; Zeng, Chao; Wang, Guoxi; Zhang, Lingxuan; Fan, Weichen; Zhao, Wei; Zhang, Wenfu

doi:10.1364/ao.379232

Appl. Opt.

2020

DOI: 10.1364/ao.379232

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Impact of third-order dispersion and three-photon absorption on mid-infrared time magnification via four-wave mixing in Si_0.8Ge_0.2 waveguides

Aihu Zheng

Qibing Sun

Leiran Wang

et al.

Abstract: We investigate the influence of third-order dispersion of dispersive elements, three-photon absorption and free-carrier effects on mid-infrared time magnification via four-wave mixing (FWM) in S i 0.8 G e 0.2 waveguides. It is found that the magnified waveform is seriously distorted by these factors, and conversion efficiency is decreased, mainly because of nonlinear absorption.… Show more

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Review on optical nonlinearity of group-IV semiconducting materials for all-optical processing

Cheng

Wang

et al. 2022

APL Photonics

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Group-IV semiconductor compounds with intense optical nonlinearity have emerged as a new branch of all-optical processing materials benefiting from the manufacturing compatibility with silicon electronic and photonic integrated circuits. Owing to the chemical reforming on the bonding or precipitating feature of the compositional atoms in the membrane matrix, either the orbital hybridization or the quantum self-assembly of interstitial composites can be employed to reform the electronic and optical characteristics. The recent development on enhancing the nonlinear refractive indices of the group-IV semiconductor materials has revealed significant progress to accelerate the all-optical switching logic, which reduces the energy consumption to enable the constitution of the advanced multi-logic gating and the entry-level photonic computing circuits. This work not only overviews the Group-IV semiconductor photonic data processing elements but also prospects for the future direction of optical quantum computation and communication. To date, the nonlinear refractive indices of the group-IV semiconductor materials can be obtained as 10-8-10-16 cm2/W in the range between 300 nm to 10000 nm in 2022. The wavelength conversion and data switching with bit rate beyond 25 Gbps have been achieved via nonlinear photonic waveguide components. By taking the SiC-made micro-ring waveguide as an example, the n2 as high as 3.05×10-14 cm2/W of the resonant SiC micro-ring gate is retrieved from the pump-probe analysis. All-optical data processing including both wavelength switching and format conversion in the highly nonlinear optical SiC waveguide resonator can achieve error-free operation with corresponding bit-error-ratios of lower than 1×10-5 at 25 Gbps after forward error correction.

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Review on optical nonlinearity of group-IV semiconducting materials for all-optical processing

Cheng

Wang

et al. 2022

APL Photonics

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Mid-infrared silicon photonics: From benchtop to real-world applications

Mitchell,

Hu,

Sun

et al. 2024

APL Photonics

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Silicon photonics is one of the most dynamic fields within photonics, and it has seen huge progress in the last 20 years, addressing applications in data centers, autonomous cars, and sensing. It is mostly focused on the telecommunications wavelength range (1.3 and 1.55 µm), where silicon becomes transparent. In this range, there are excellent light sources and photodetectors, as well as optical fibers operating with extremely low losses and dispersion. It is a technology that hugely benefits from the availability of complementary metal–oxide–semiconductor (CMOS) fabrication infrastructure and techniques used for microelectronics. Silicon and germanium, as another CMOS compatible group IV material, are transparent beyond the wavelength of 2 µm. The mid-IR wavelength range (2–20 µm) is of particular importance as it contains strong absorption signatures of many molecules. Therefore, Si- and Ge-based platforms open up the possibility of small and cost-effective sensing in the fingerprint region for medical and environmental monitoring. In this paper, we discuss the current mid-IR silicon photonics landscape, future directions, and potential applications of the field.

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Impact of third-order dispersion and three-photon absorption on mid-infrared time magnification via four-wave mixing in Si_0.8Ge_0.2 waveguides

Cited by 2 publications

References 32 publications

Review on optical nonlinearity of group-IV semiconducting materials for all-optical processing

Review on optical nonlinearity of group-IV semiconducting materials for all-optical processing

Mid-infrared silicon photonics: From benchtop to real-world applications

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Impact of third-order dispersion and three-photon absorption on mid-infrared time magnification via four-wave mixing in Si0.8Ge0.2 waveguides

Cited by 2 publications

References 32 publications

Review on optical nonlinearity of group-IV semiconducting materials for all-optical processing

Review on optical nonlinearity of group-IV semiconducting materials for all-optical processing

Mid-infrared silicon photonics: From benchtop to real-world applications

Contact Info

Product

Resources

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Impact of third-order dispersion and three-photon absorption on mid-infrared time magnification via four-wave mixing in Si_0.8Ge_0.2 waveguides