2008 IEEE International Symposium on Electromagnetic Compatibility 2008
DOI: 10.1109/isemc.2008.4652103
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Impact of thermal stress on the characteristics of conducted emissions

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Cited by 13 publications
(9 citation statements)
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“…Figure 1 presents the methodology used to extract EMC level drifts induced by ageing as accurately as possible [4]. , thermal cycling or electrical overstress induce a significant variation of electromagnetic behaviour [5]. In the following experimental studies, HTOL, LTOL and electrical stress have been selected to accelerate electrical degradation mechanisms.…”
Section: Emr Methodologymentioning
confidence: 99%
“…Figure 1 presents the methodology used to extract EMC level drifts induced by ageing as accurately as possible [4]. , thermal cycling or electrical overstress induce a significant variation of electromagnetic behaviour [5]. In the following experimental studies, HTOL, LTOL and electrical stress have been selected to accelerate electrical degradation mechanisms.…”
Section: Emr Methodologymentioning
confidence: 99%
“…The drift of the electrical characteristics of semiconductor devices can have direct consequences on integrated circuit electromagnetic emission (EME) and power integrity (PI). Recently, some publications have shown that accelerated aging tests such as high or low temperature operating life, thermal cycling, or electrical overstress induce a significant variation of EME produced by power supply units [4], high side switch devices [5] or I/O buffers [6]. However, these studies do not clarify the origins of EME changes and do not address modeling and prediction issues.…”
Section: Introductionmentioning
confidence: 97%
“…The management of both constraints constitutes a serious challenge for electronic industry to ensure a reliable operation of digital circuits and comply with electromagnetic compatibility (EMC) requirements. Recently, some publications have shown experimentally that accelerated aging tests such as high or low temperature operating life, thermal cycling, or electrical overstress induce a significant variation of EME produced by power supply units [5], high side switch devices [6] digital circuits or I/O buffers [7]. However, these studies do not clarify the origins of EME changes and do not address the modeling and prediction issues.…”
Section: Introductionmentioning
confidence: 99%