Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films

Taylor, T. R.; Hansen, P.; Acikel, B.; Pervez, Nadia K.; York, R.A.; Streiffer, S. K.; Speck, James S.

doi:10.1063/1.1459482

Cited by 153 publications

(91 citation statements)

References 13 publications

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“…1. [9][10][11][12][13][14] Hence, as exhibited in Figs. 3 and 1, during the cooling process, tensile stress was generated in PZT films grown on Si substrate while films on sapphire and YSZ substrates showed the opposite phenomenon.…”

Section: Resultsmentioning

confidence: 60%

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

Han

Ryu

Yoon

et al. 2011

Journal of Applied Physics

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Polycrystalline Pb(Zr0.52Ti0.48)O3 (PZT) thick films (thickness ∼10 μm) were successfully fabricated by using a novel aerosol deposition technique on Si wafer, sapphire, and single crystal yitria stabilized zirconia (YSZ) wafer substrates with Pt electrodes and their dielectric, ferroelectric, and piezoelectric properties, and in-plane stresses were investigated. The films with different stress conditions were simply controlled by the coefficient of thermal expansion (CTE) misfit of PZT films and substrates. The results showed that the films bearing in-plane compressive stress deposited on the YSZ and sapphire substrates have superior dielectric, ferroelectric (∼90%), and piezoelectric (>200%) properties over that of the Si wafer. Among these three substrates, YSZ shows superior properties of the PZT films. However, films on Si wafer with tensile stress present lower properties. We believed that in-plane compressive stresses within the films are benefited, the formation of c-domain parallel to the thickness direction resulting in the higher piezoelectric properties. These results suggest that the properties of polycrystalline PZT thick films can be adjusted by simply choosing the substrates with different CTEs.

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Section: Resultsmentioning

confidence: 60%

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

Han

Ryu

Yoon

et al. 2011

Journal of Applied Physics

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“…Tensile film stresses reduce the permittivity of perovskite ferroelectric films in their paraelectric state, such as (Ba,Sr)TiO 3 , due to Q 12 < 0 [9,16]. Investigations are currently underway to determine losses in the microwave region and the tunability of films on vycor with improved the electrode stacks.…”

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confidence: 99%

Influence of strain on the dielectric relaxation of pyrochlore bismuth zinc niobate thin films

Klenov

Stemmer

2004

Applied Physics Letters

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Bi 1.5 Zn 1.0 Nb 1.5 O 7 (BZN) films were deposited by rf magnetron sputtering on different substrates to systematically vary the film stress due the thermal mismatch between BZN and the substrate. Substrates included Pt/SiO2 covered silicon, vycor glass, magnesium oxide, and sapphire. The BZN film microstructures (orientation, grain size, and roughness) were similar on the different substrates. Measurements of the permittivity and dielectric loss tangent were carried out between 80 and 300 K at frequencies between 10 kHz and 10 MHz. Films that were under a moderate tensile stress showed a low-temperature dielectric relaxation, associated with a dielectric loss peak and drop in permittivity, at ∼100 K. In contrast, the dielectric relaxation was shifted to temperatures below 80 K in films on vycor that were under a large tensile stress. This shift reflected a lowering of the activation energy of the dielectric relaxation processes due to tensile stress. It is expected that films under large tensile stress require higher frequencies than bulk BZN to shift the dielectric relaxation to room temperature, which makes these films attractive for low-loss high-frequency applications.

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“…Fig. 2 illustrates this temperature instability whereby Taylor and coworkers (Taylor et al,2002) experimentally explored the dielectric response as a function of temperature for five BST75/25 thin films on a variety of substrates with different thermal expansion coefficients (TECs). This work confirms that there is indeed a temperature dependent dielectric response for thin film BST.…”

Section: Introductionmentioning

confidence: 99%

Performance Enhanced Complex Oxide Thin Films for Temperature Stable Tunable Device Applications: A Materials Design and Process Science Prospective

Cole¹,

Alpay²

2011

Ferroelectrics - Material Aspects

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Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films

Cited by 153 publications

References 13 publications

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

Influence of strain on the dielectric relaxation of pyrochlore bismuth zinc niobate thin films

Performance Enhanced Complex Oxide Thin Films for Temperature Stable Tunable Device Applications: A Materials Design and Process Science Prospective

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