Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

Personnic, S.; Bourdelle, K.K.; Letertre, F.; Tauzin, A.; Cherkashin, Nikolay; Claverie, A.; Fortunier, Roland; Klöcker, Helmut

doi:10.1063/1.2829807

Cited by 61 publications

(61 citation statements)

References 20 publications

(27 reference statements)

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“…Platelet nucleation and growth occur through the coprecipitation of gas atoms ͑H and/or He͒ and vacancies. 11,15 Our TEM and SIMS results show that the behavior of H is quite similar in H-only implanted Si and SiGe samples after annealing at moderate temperature, although some small differences in binding energies exist. We do not expect that He behaves radically differently in SiGe than in Si.…”

Section: Discussionmentioning

confidence: 86%

“…9,11 Figure 4 shows the SIMS profiles of H and He obtained after sequential implantations in Si ͓Fig. 4͑a͔͒ and SiGe ͓Fig.…”

Section: Resultsmentioning

confidence: 99%

“…It is known that the propagation of fracture lines is due to formation of ͑001͒ hydrogenterminated internal surface and pumping of gas ͑H 2 ͒ in it. 11 We speculate that, at the later stages of the layer transfer, due to the lower thermal stability of the Si-H bond the hydrogenterminated ͑100͒ internal surface in Si 0.8 Ge 0.2 changes its morphology. Si in the matrix tends to close up other nearby Si, resulting in a decrease in the size and density of these platelets.…”

Section: Discussionmentioning

confidence: 99%

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Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H

Nguyen

Bourdelle

Aulnette

et al. 2008

Journal of Applied Physics

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We have performed systematic measurements of the splitting kinetics induced by H-only and He + H sequential ion implantation into relaxed Si 0.8 Ge 0.2 layers and compared them with the data obtained in Si. For H-only implants, Si splits faster than Si 0.8 Ge 0.2 . Sequential ion implantation leads to faster splitting kinetics than H-only in both materials and is faster in Si 0.8 Ge 0.2 than in Si. We have performed secondary ion mass spectrometry, Rutherford backscattering spectroscopy in channeling mode, and transmission electron microscopy analyses to elucidate the physical mechanisms involved in these splitting phenomena. The data are discussed in the framework of a simple phenomenological model in which vacancies play an important role.

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Section: Discussionmentioning

confidence: 86%

“…9,11 Figure 4 shows the SIMS profiles of H and He obtained after sequential implantations in Si ͓Fig. 4͑a͔͒ and SiGe ͓Fig.…”

Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H

Nguyen

Bourdelle

Aulnette

et al. 2008

Journal of Applied Physics

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“…As the thermal annealing temperature increases, the hydrogen filled microcavities keep growing. 24,25 Subsequent annealing and a combination of the buildup of internal gas pressure in the cavities and the growth of the micro-cavities leads to layer splitting by micro-crack propagation. Moutanabbir et al, (2010a) 26 concluded that thermoevolution of defects in H implanted and annealed freestanding GaN under ion-cut conditions revealed nanobubbles of 1-2 nm in diameter formation around the damage band.…”

Section: Resultsmentioning

confidence: 99%

Effect of Hydrogen Implantation on the Mechanical Properties of AlN throughout Ion-Induced Splitting

Mamun

Tapily

Moutanabbir

et al. 2018

ECS J. Solid State Sci. Technol.

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The ability to transfer bulk quality III-N thin layers onto foreign platforms is a powerful strategy to enable high-efficiency and low-cost optoelectronic devices. Ion-cut using sub-surface defect engineering has been an effective process to split and transfer a variety of semiconductors. With this perspective, hydrogen-implanted AlN samples were annealed in air at temperatures ranging from 300 • C to 600 • C for 5 min to study the influence of pre-layer splitting treatments on the nanomechanical properties. There is a clear dependence of the hardness on implanted hydrogen implantation fluence. We observe that the as-implanted hardness increased from 18 GPa for the virgin reference sample to ∼25 GPa for the highest fluence of 3 × 10 17 H cm −2 prior to annealing. In the case of reference single crystalline Si samples, a significant drop in the hardness and elastic modulus is observed in the H implantation-induced damage zone subsequent to thermal annealing , while for crystalline epitaxial AlN samples with 0.5 × 10 17 and 2.0 × 10 17 H implant fluences, the hardness increases and peaks until the thermal annealing temperature reaches 350 • C and subsequently begins to drop thereafter for higher annealing temperatures. However, for the 1.0 × 10 17 H implantation fluence the hardness continues to increase with increasing thermal annealing temperature. The remarkable growth in the optoelectronic industry is attributed to group III-nitride compound semiconductors such as GaN, AlN, and InN. [1][2][3][4][5][6] Due to the wide bandgap nature and the piezoelectric properties of AlN and GaN 7,8 and the high electron mobility and small bandgap of InN, 9 significant interest in the fabrication of these materials is palpable.The exploitation of the full potential of the group III-nitride compound semiconductors in the emerging optoelectronic technologies such as deep ultraviolet DUV light emitting diodes LEDs, surface acoustic wave sensors (SAWs), RF filters in MEMS technologies etc., faces major challenges namely the lack of or the high cost of high crystalline quality material. Although bulk group III-nitride wafers are excessively expensive, only 2-4 inch bulk GaN wafers are commercially available. In general, due to its high thermal stability, single crystal sapphire substrates are used for the epitaxial growth of group III-nitride layers. Due to lattice and thermal mismatch between the III-N semiconductor materials and growth on substrates such as sapphire, it is documented that the grown layers tend to be defective with misfit dislocations. Reducing interfacial defect density requires the growth of very thick layers which is a very lengthy process. Bulk wafers are obtained from these thick layers. In order to reduce the cost of these bulk materials one approach would be to implement the ion-cut process. [10][11][12] The ion-cut process, which is based on ion (H and/or He) implantation and wafer bonding, is used to transfer crystalline layers onto substrates that produce heterostructures that cannot be produced by other...

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“…On this surface, the cylinder pennyshape microcracks are circles. The number of circles on the surface, as well as their diameter (average of 8 nm), has been chosen according to the experimental observations of Personnic et al [18]. Fig.…”

Section: Elements Of the Modelingmentioning

confidence: 99%

Modeling of Stress and Strain Fields Induced during the Smart-Cut Process on Silicone - Influence of Different Couplings for Diffusion of Hydrogen at a Microscopic Scale

Zhao

Labergère

Panicaud

et al. 2014

AMR

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Abstract. The Smart-Cut technology consists in the increasing of external temperature and pressure imposed by the diffusion of hydrogen ions within silicon substrates leading to a wafer splitting. In the present work, we studied the evolution of the stress field in the crystalline lattice of silicon, the diffusion of hydrogen ions that can lead to the growth and coalescence of cavities. Meanwhile, we test several models and simulate these phenomena by a numerical approach, in order to compare the results to experimental observations. Introduction.

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Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

Cited by 61 publications

References 20 publications

Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H

Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H

Effect of Hydrogen Implantation on the Mechanical Properties of AlN throughout Ion-Induced Splitting

Modeling of Stress and Strain Fields Induced during the Smart-Cut Process on Silicone - Influence of Different Couplings for Diffusion of Hydrogen at a Microscopic Scale

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