Impact of the lateral straggle on the Analog and RF performance of TFET

Ghosh, Sayani; Koley, Kalyan; Sarkar, Chandan Kumar

doi:10.1016/j.microrel.2014.10.008

Cited by 47 publications

(9 citation statements)

References 18 publications

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“…However, obtaining an abrupt doping profile is challenging. Practically, during ion-implantation, some dopants extend laterally from the source towards the channel [42], [43]. Therefore, we examine the electrical characteristics of the devices with the Gaussian source doping profile with lateral straggle (σ) varying between 0 nm (abrupt doping) to 5 nm keeping the peak doping concentration, N S = 1 × 10 20 atoms/cm 3 .…”

Section: Effect Of Source Doping Profilementioning

confidence: 99%

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

Garg

Saurabh

2020

IEEE Open J. Nanotechnol.

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In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction. The within-channel BTBT is enabled by sharp bandbending induced by the dual material gate (DMG). The workfunctions of two metal gates are chosen, such that the surface potential profile exhibits a distinct step at the DMG interface. Consequently, even under equilibrium condition, a high lateral electric field and an abrupt tunneling junction exist at the DMG interface. When a small gate voltage is applied, the inherent lateral electric field aids in creating an abrupt band alignment and obtaining a small tunneling width. As a result, an excellent average subthreshold swing is obtained in the proposed device. We have also investigated scaling of channel lengths in the proposed device and have demonstrated that within-channel tunneling can be exploited for channel lengths of 40nm and above. Furthermore, low drain threshold voltage and suppressed drain-induced barrier lowering can be obtained in the proposed device. Moreover, in contrast to conventional TFETs, electrical characteristics of the proposed device are less susceptible to source doping variations and shift in gate-edge with respect to the source-channel junction. Index Terms-Tunnel field-effect transistor, dual material gate, subthreshold swing, threshold voltage, lateral electric field, process-induced variations.

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Section: Effect Of Source Doping Profilementioning

confidence: 99%

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

Garg

Saurabh

2020

IEEE Open J. Nanotechnol.

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“…Koley et al highlighted that RF/analog parameters of symmetric and asymmetric DG MOSFET is improved with increased in σ 26 . It is also reported that RF/analog and linearity behavior of DG TFET is suppressed with rise in σ value 27,28 . Over course of time, analysis on effect of σ on RF/analog characteristic are presented in gate modulated 29 and hetero‐stacked TFETs 30 .…”

Section: Introductionmentioning

confidence: 99%

Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET

Saha

Panda

Goswami

et al. 2021

Int J RF Mic Comp-Aid Eng

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The diffusion of doping concentration in source/drain regions through ion implantation technique extents to the channel, which decreases the inversion portion of channel and results in variation of device behavior. In this paper, by merging the advantages of Ge‐source TFET and dual material gate (DMG) TFET, a new device named as Ge‐source dual material double gate (DMDG) TFET is proposed. We have investigated DC parameters like drain current vs gate bias, drain current vs drain bias, subthreshold swing (SS), and current ratio (ION/IOFF) by changing the lateral straggle parameter (σ) from 0 to 5 nm through TCAD device simulator in proposed TFET. The RF/analog behavior like transconductance (gm), output conductance (gd), intrinsic gain (gm/gd), total gate capacitance (Cgg), cut‐off frequency (fc), transconductance generation factor (TGF), transconductance frequency product (TFP), gain frequency product (GFP), and gain transconductance frequency product (GTFP) are reported for different σ values in proposed TFET. It is found that both DC and RF/analog figure of merits are a function of σ. It is perceived that ION as well as RF/analog characteristics are improved, whereas, short channel parameter degrades with increase in σ. Finally, the effect of σ on noise performance and s‐parameters are highlighted in proposed device.

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“…Tunnel field effect transistor (TFET) has a potential to overcome the above-mentioned problems due to its different working principle (band-to-band tunnelling mechanism) unlike MOSFET [4][5][6]. Regardless of these advantages, TFET suffers from various problems related to low drain current, conduction in ambipolar state and poor high-frequency performance [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device reliability

Gupta

Sharma

Soni

et al. 2018

Micro & Nano Letters

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In this work, the authors have reported the reliability issues of dual material control gate tunnel field effect transistor (DMCG-TFET) and proposed heterogeneous gate dielectric dual metal control gate tunnel field effect transistors (HD DMCG-TFETs) in terms of interface trap charges (ITCs). The positive and negative types of localised charges at the semiconductor/insulator interface cause degradation in the device performance (DC/RF). In this regard, the proposed structure which includes combination of low-K and high-K dielectric improves the immunity towards the ITCs at the interface of semiconductor/insulator with better performance. In this concern, the study has analysed the impact of ITCs on DC and analogue/RF performances of the DMCG-TFET and HD DMCG-TFET in terms of various parameters like electric field, energy band diagram, carrier concentration, transfer characteristics, transconductance (g m), cutoff frequency (f T) and gain bandwidth product. Further to this, impact on device linearity parameters is also analysed through higher order of transconductance coefficients (g m3), VIP2, VIP3 and IIP3.

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Impact of the lateral straggle on the Analog and RF performance of TFET

Cited by 47 publications

References 18 publications

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET

Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device reliability

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