2013
DOI: 10.1088/0022-3727/47/3/034009
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Impact of the interplay between nonstoichiometry and kinetic energy of the plume species on the growth mode of SrTiO3thin films

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Cited by 58 publications
(68 citation statements)
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“…In previous research, 17,18 we found that the oxidation state in which the plasma constituents arrive at the substrate can influence the stoichiometry of the film growth; yet, film growth would still take place. In other research where the background gas is modified, either its pressure or its composition, to investigate its influence on the film growth 33,34 results. That is, a change in stoichiometry is present for certain background gas compositions and pressures, but film growth is still present.…”
Section: Apl Mater 4 126102 (2016)mentioning
confidence: 99%
“…In previous research, 17,18 we found that the oxidation state in which the plasma constituents arrive at the substrate can influence the stoichiometry of the film growth; yet, film growth would still take place. In other research where the background gas is modified, either its pressure or its composition, to investigate its influence on the film growth 33,34 results. That is, a change in stoichiometry is present for certain background gas compositions and pressures, but film growth is still present.…”
Section: Apl Mater 4 126102 (2016)mentioning
confidence: 99%
“…The diffusive propagation of the ablated species beyond this distance strongly reduces the deposition rate and can affect the film stoichiometry by preferential scattering of lighter elements with the background gas 25 . In this regime, the kinetic energy of the species is of the order of the thermal energy, which is lower than the activation energy for surface diffusion of adatoms and can affect the growth mode 26 . The growth was monitored by in-situ reflection high-energy electron diffraction (RHEED).…”
mentioning
confidence: 99%
“…Deposition is the result of complex spatiotemporal, plasma-chemical dynamics. This renders the growth of films highly dependent on the external growth parameters, such as ablation laser fluence 5,6 and background gas pressure and composition, 7 in manners that are not well understood. More specifically, the often stringent requirements concerning the external parameters to grow high-quality defect-free films indicate that the state in which plasma constituents arrive at the substrate (oxidation state, propagation speed, and arrival time of different components) is of equal or even greater importance than just the stoichiometric transfer of materials.…”
mentioning
confidence: 99%