Impact of the gate work function on the experimental I-V characteristics of MOS solar cells simulated with the Sentaurus TCAD software
Fábio Izumi,
Marcos Norio Watanabe,
Bárbara Siano Alandia
et al.
Abstract:In this work, the influence of gate work function on the experimental J-VG characteristics of MOS solar cells was investigated with the aid of the Sentaurus TCAD for 2D numer-ical simulations of TiN/SiOxNy/Si Al/SiOxNy/Si and Al/MgO/Mg/SiOxNy/Si structures aiming at solar cells for en-ergy harvesting applications. The increase of the gate work function led to the increase of the reverse current density as pointed out by the Sentaurus TCAD simulations and by the ex-perimental J-VG characteristics. The work func… Show more
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