Impact of switching frequencies on the TID response of SiC power MOSFETs

Yang, Sheng; Liang, Xiaowen; Cui, Jiangwei; Zheng, Qiwen; Sun, Jing; Liu, Mohan; Dang, Zhang; Feng, Haonan; Yu, Xuefeng; Xiang, Chuanfeng; Li, Yudong; Guo, Qi

doi:10.1088/1674-4926/42/8/082802

Cited by 12 publications

(1 citation statement)

References 18 publications

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“…In previous studies, total ion dose (TID) and single event effect (SEE) were usually studied separately. [7][8][9] The TID effect has been studied in terms of irradiation conditions, such as temperature [10][11][12] and gate bias. [13][14][15] It has been revealed that the TID effect is induced by the radiation-induced holes moving toward the SiC/SiO 2 interface and trapped by defects in the oxide near the interface.…”

Section: Introductionmentioning

confidence: 99%

Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

et al. 2023

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The synergistic effect of total ionizing dose (TID) and single event gate rupture (SEGR) in SiC power MOSFETs was investigated via simulation. The device was found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism was revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.

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Section: Introductionmentioning

confidence: 99%

Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

et al. 2023

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Impurities and defects in 4H silicon carbide

Wang

Huang

Yang

et al. 2023

Applied Physics Letters

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The widespread use of 4H silicon carbide (4H-SiC) is just around the corner since high-power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon development of the world. Quantum technologies are also intensively explored by scrutinizing 4H-SiC as a platform for wafer-scale integration of semiconductor and quantum technologies. Given the importance of impurities and defects for any semiconductor, comprehensive and insightful understanding of impurities and defects in 4H-SiC is imperative. In this Perspective, we summarize recent experimental and theoretical advances in researches on impurities and defects in 4H-SiC after briefly reviewing the history of 4H-SiC. Impurity engineering and defect engineering for the realization of the full potential of 4H-SiC are also discussed. Challenges for the study on impurities and defects in 4H-SiC are finally outlined.

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Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights

Yang,

Xu,

Cui

et al. 2024

J. Semicond.

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Molten-alkali etching has been widely used to reveal dislocations in 4H silicon carbide (4H-SiC), which has promoted the identification and statistics of dislocation density in 4H-SiC single crystals. However, the etching mechanism of 4H-SiC is limited misunderstood. In this letter, we reveal the anisotropic etching mechanism of the Si face and C face of 4H-SiC by combining molten-KOH etching, X-ray photoelectron spectroscopy (XPS) and first-principles investigations. The activation energies for the molten-KOH etching of the C face and Si face of 4H-SiC are calculated to be 25.09 and 35.75 kcal/mol, respectively. The molten-KOH etching rate of the C face is higher than the Si face. Combining XPS analysis and first-principles calculations, we find that the molten-KOH etching of 4H-SiC is proceeded by the cycling of the oxidation of 4H-SiC by the dissolved oxygen and the removal of oxides by molten KOH. The faster etching rate of the C face is caused by the fact that the oxides on the C face are unstable, and easier to be removed with molten alkali, rather than the C face being easier to be oxidized.

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Impact of switching frequencies on the TID response of SiC power MOSFETs

Cited by 12 publications

References 18 publications

Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

Impurities and defects in 4H silicon carbide

Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights

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