Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations

Garcia, Sérgio Boscato; Íñiguez-de-la-Torre, I.; Matéos, J.; González, T.; Pérez, S.

doi:10.1088/0268-1242/31/6/065005

Cited by 28 publications

(25 citation statements)

References 39 publications

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“…The thermal resistance RTH = ΔT/Pdiss was extracted from the slope of fitted trend lines of TJ vs Pdiss. Overall, the results showed that RTH of the HEMT (10°C mm/W) was ~43% lower as compared to the DHFET (17.5°C mm/W) and comparable to reported values of GaN on SiC devices of similar dimensions [37], confirming the results we obtained from the electrical measurements. Fig.…”

Section: Raman Thermography Measurementsupporting

confidence: 89%

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Kabouche

Pecheux

Harrouche

et al. 2019

Int. J. Hi. Spe. Ele. Syst.

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In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 A/mm associated to a high electron confinement and an extrinsic transconductance gm of 500 mS/mm, this structure shows excellent electrical characteristics. A maximum oscillation frequency fmax of 242 GHz has been observed. As a result, a state-of-the-art combination at 40 GHz of output power density (POUT = 7 W/mm) and power added efficiency (PAE) of 52% up to VDS = 25V has been obtained. The achievement of such outstanding performance is attributed to the reduced thermal resistance (RTH) as compared to the commonly used double heterostructure by means of Raman thermography.

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Section: Raman Thermography Measurementsupporting

confidence: 89%

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Kabouche

Pecheux

Harrouche

et al. 2019

Int. J. Hi. Spe. Ele. Syst.

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“…Meanwhile, the interface of GaN/SiC is a thick AlN nucleation layer with 20 nm thickness that involves intricate resistance mechanisms, including defects, dislocations, and interfacial disorders, these mechanisms seriously damage the thermal property, therefore heat spreading capacity of this interface of GaN/SiC was represented as a single effective interface thermal resistance in our model. Finally, to reduce the total computing time, only a quarter of device was simulated, because of their structural symmetry [3,[12][13][14][15][16][17][18][19][20][21].…”

Section: Device Details and Simulation Methodsmentioning

confidence: 99%

Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs

Guo¹,

Chen²,

Shi³

2020

Micromachines

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The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated by using three-dimensional simulation with the finite element method. To improve the calculation accuracy, the nonlinear thermal conductivities and near-junction region of GaN chip are considered and treated appropriately in our numerical analysis. The periodic transient pulses temperature and temperature distribution are analyzed to estimate thermal response when GaN amplifiers are operating in pulsed mode with kilowatt-level power, and the relationships between channel temperatures and pulse width, gate structures, and power density of GaN device are analyzed. Results indicate that the maximal channel temperature and thermal impedance of device are considerably influenced by pulse width and power density effects, but the changes of gate fingers and gate width have no effect on channel temperature when the total gate width and active area are kept constant. Finally, the transient thermal response of GaN amplifier is measured using IR thermal photogrammetry, and the correctness and validation of the simulation model is verified. The study of transient simulation is demonstrated necessary for optimal designs of pulse-operated AlGaN/GaN HEMTs.

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“…All the interfaces between the diode and external surroundings are set to be adiabatic boundary conditions. In order to simplify the algorithm and solve the non-convergence problem, the heat transport from the metal contact to external surroundings is not included in our simulations, a common practice in the simulation of thermal effect as described in [21][22][23]. The LAT.TEMP lattice temperature model is added to the MODELS statement to include heat flow.…”

Section: Methods Of Analysis and Physical Modelsmentioning

confidence: 99%

Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies

Wang

Liu

2018

Applied Sciences

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In this paper, a comprehensive evaluation of thermal behavior of the GaN vertical n+-n−-n-n+ Gunn diode have been carried out through simulation method. We explore the complex effects of various parameters on the device thermal performance through a microscopic analysis of electron movements. These parameters include operation bias, doping level, and length of the active region. The increase of these parameters aggravates the self-heating effect and degrades the electron domains, which therefore reduces the overall performance output of the diode. However, appropriate increase of the doping level of active region makes the lattice heat distribute more uniformly and improves the device performance. For the first time, we propose the transition domain, which is in between the dipole domain and accumulation layer, and stands for the degradation of the electron domain. We have also demonstrated that dual domains occur in the device with longer active region length and higher doping level under EB (Energy balance) model, which enhances the harmonics component. Electric and thermal behaviors analysis of GaN vertical Gunn diode makes it possible to optimize the device.

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Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations

Cited by 28 publications

References 39 publications

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs

Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies

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