2019
DOI: 10.35940/ijitee.a4643.119119
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Impact of Structural Aspect, Metal Gate and Channel Material on UTB-SOI-MOSFET

Pradip Kumar Nanda*,
Shiva Prasad Das,
Soumya Ranjan Panda
et al.

Abstract: Ultra Thin Body Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors (UTB-SOI-MOSFETs) provide better immunity to Short Channel Effects (SCEs). But the behaviour changes at miniaturization and still the many unexplored effects need to be analysied. Here in this paper, Drain Induced Barrier Lowering (DIBL) and sub-threshold Slope (SS) variation of a n-channel UTB-SOI-MOSFET have been analyzed by changing the device structural aspects like gate length (LG), BOX thickness (tBOX) and Silicon fil… Show more

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