Impact of silver incorporation at the back contact of Kesterite solar cells on structural and device properties

Mwakyusa, Lwitiko P.; Leist, Lennart; Rinke, Monika; Welle, Alexander; Paetzold, Ulrich W.; Richards, Bryce S.; Hetterich, M.

doi:10.1016/j.tsf.2020.138223

Cited by 9 publications

(4 citation statements)

References 32 publications

(46 reference statements)

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“…图 11 分别给出了 CAZTS [69] 和 CLZTS [58] [58,69] Figure 11 X-ray diffraction patterns of (I) CAZTS, (II) CAZTSe, and (III, IV) CLZTS solid solutions [58,69] 驱膜中 [58] Figure 12 Li content as measured by inductively coupled plasma mass spectrometry (ICP-MS) at different steps of device processing [58] 为了获得更高替位量 [50,70,90,94] , 该液相固溶体在反应过程中可以促进传质、加速元素扩散和反应, 促进晶粒生长; 第二种是认为 Ag ＋与硫化(硒化)过程中的 S(Se)结合形成低熔点的 Ag-S(Se)液相助熔剂 [84] , 并促进晶粒生长. 两种解释的区别在于形成的助熔剂不同, Mwakyusa 等 [84] 认为 Ag-S(Se)助熔剂通常在湿化学法制备的含 S 前驱膜中较易形成, 而 Sn-Ag-Cu 固溶体在真空法制备的仅含金属元素的前驱膜中较易形成, 且还受到前驱膜组分和硫化(硒化)过程的影响. 对于 Li ＋而言, 类似碱金属掺杂剂的作用, 在富 S(Se)的环境中 Li ＋在低温阶段(300 ℃)会形成 Li-Se 液相助熔剂, 促进传质和晶粒生长 [58,90,97] .…”

Section: LIunclassified

“…[67] Figure 10 (I) The phase structure of CZTS vs Li doping level; (II) the formation energy of Li occupied at different Wyckoff sites vs Li doping level (compared to Ag) [67] 3 CZTSSe 一价金属部分替位的实验研究 [19,24,43,[75][76] [50,[69][70][77][78][79][80] 、共蒸发法 [81] 和高温固相法 [69,[82][83] . 溅射法和共蒸发法的制备通常要经历两阶段, 首先使用金属元素(Ag、Cu、Zn、Sn)单质或硫(硒)化物作为金属源制备金属预制层(Ag 层可位于金属预制层和 Mo 衬底之间 [50,70,77,79,84] 、金属预制层中 [70,80] 或顶部 [78] ). 除了溅射法和蒸发法, 还可以用沉积法制备 [77] .…”

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Research Progress of Metal(I) Substitution in Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells

Zhou¹,

Xu²,

Duan³

et al. 2021

Acta Chimica Sinica

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Cu2ZnSn(S,Se)4 solar cell (CZTSSe), as a new type of inorganic thin-film solar cells, has been widely studied in recent years due to the advantages of earth-abundant and environmental-friendly composition elements, high light absorption coefficient and adjustable band gap. CZTSSe solar cell is thus a highly competitive photovoltaic device with potential applications in flexibility, building integrated photovoltaics (BIPV) and so on. So far, 12.6% certified efficiency has been achieved for this kind of solar cells. Open-circuit voltage (VOC) deficit is always the key factor to unsatisfied efficiency of CZTSSe solar cells, and band tailing, mismatch of energy band structure and deep level defects are the main causes to VOC deficit. Typically, Cu-Zn disorder-induced defects widely exist in the bulk absorber, due to similar radius of Cu and Zn elements could lead to relatively low formation energy of CuZn and ZnCu anti-site defects. Metal(I) substitution is an effective way to solve Cu-Zn disorder, which can well reduce VOC deficit via lowering band tailing and improving the device structure, leading to better cell performance. However, very few review papers have focused on the metal(I) substitution work. In this review, we will summarize the research progress of metal(I) substitution in Cu2ZnSn(S,Se)4 thin film solar cells. Part I introduces the structure and problems of CZTSSe solar cells. Part II shows the origin of metal(I) substitution and theoretical research on substituted materials. Part III focuses on synthetic methods about metal(I) partial substitution devices and influence on crystal growth, band tailing, interface defects and band structure. Part IV briefly introduces metal(I) total substitution devices. Part V anticipates the prospects and bottleneck of metal(I) substitution devices, and give some possible solutions to these current

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Section: LIunclassified

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Research Progress of Metal(I) Substitution in Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells

Zhou¹,

Xu²,

Duan³

et al. 2021

Acta Chimica Sinica

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“…So far, limited reports have been accessible on Ag alloying in CZTSe thin films and its device performance, where twostep methods were adopted for the preparation of Ag-alloyed CZTSe thin films comprising of deposition of metallic thin films by physical and chemical techniques such as sputtering, solution proceeds, co-evaporation, and thermal evaporation followed by annealing/selenization at elevated temperature (≥500 °C). [1,[28][29][30][32][33][34][35][36][37] However, due to the high diffusivity of silver at high temperatures, it rapidly distributes throughout the depth of the CAZTSe films and it is difficult to control its uniform distribution across the film thickness at elevated temperatures. [28] In this connection, low-temperature selenization (≤480 °C) was explored for the uniform distribution of Ag in CZTSe thin films.…”

Section: Introductionmentioning

confidence: 99%

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films

Patil,

Mondal,

Babujani

et al. 2024

Physica Status Solidi (b)

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In this work, the preparation of “Ag” alloying Cu2ZnSnSe4 films using a two‐step process, comprising vacuum evaporated ([Sn/ZnSe/Ag/Sn/ZnSe/Cu] × 2) precursor layer deposition on glass substrates followed by low‐temperature pre‐annealing treatment (PAT) in Se ambiance (200–400 °C) for 30 min and high‐temperature annealing at 500 °C for 1 min, is reported. The low‐temperature PAT provides adequate Se diffusion into precursor layers and plays a pivotal influence on the growth and properties of (Cu,Ag)2ZnSnSe4 films. The Zn/Sn and Se/metals ratios are found to be varied in the range 0.77–1.32 and 1.07–0.86 with PAT (200–400 °C) followed by annealing at 500 °C for 1 min. The precursor layers are pre‐annealed at 300 °C for 30 min, followed by annealing at 500 °C for 1 min, found to be nearly stoichiometric with uniform distribution of constituents. The valence states of the constituents are confirmed by X‐Ray photoelectron spectroscopy. Both X‐Ray diffraction and Raman studies confirm the formation of single‐phase (Cu,Ag)2ZnSnSe4 along (112) orientation with a strong Raman mode at 194 cm−1. Large and well‐defined grains with a mean size of 0.7 μm are seen in the field‐emission scanning electron microscope images. The (Cu,Ag)2ZnSnSe4 films exhibit a direct bandgap of 1.12 eV and p‐type conductivity with high mobility, 5.23 cm2 V−1 s−1.

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“…The highest efficiency attained for CZTS(Se) is 13.2% in the nonvacuum process currently [15], followed by 12.62% in the vacuum process [16]. The currently lower efficiency of CZTS(Se) compared to CIGS can be primarily attributed to the lower open-circuit voltage (V OC ) and the lower fill factor [17]. Most studies attribute the lower V OC primarily to the secondary phases in the absorber layers, smaller grain size, and CuZn antisite defects, of which the secondary phases are the most significant factor in relation to CZTS(Se).…”

Section: Introductionmentioning

confidence: 99%

All-Vacuum-Deposited Bifacial Cu2ZnSnSe4 Photovoltaic Cells with Sputtered Cd-Free Buffer Layer

Lai

Yang

Chen

et al. 2023

International Journal of Energy Research

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By depositing metal precursors on fluorine-doped tin oxide substrates using evaporation and postselenisation and modifying the number of stacked metallic precursor layers, this study systematically analysed the effect of cation changes on the absorber layer and the solar cell properties of Cu2ZnSnSe4 (CZTSe). Furthermore, in this study, an all-vacuum method was adopted to prepare a cadmium-free bifacial CZTSe solar cell and conducted damp heat tests on the device. The findings indicate that the increase in the number of stacked metallic precursor layers suppresses secondary phase generation, thereby enhancing the film performance and bifacial solar cell characteristics. The cadmium-free bifacial CZTSe solar cell prepared in this study exhibited the efficiency of 4.13% under bifacial incident light. Moreover, the degradation of the device was effectively mitigated in the damp heat tests compared with previously reported devices with metal substrates. These findings can provide new directions for research and lead to novel applications for CZTSe solar cells in the future.

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Impact of silver incorporation at the back contact of Kesterite solar cells on structural and device properties

Cited by 9 publications

References 32 publications

Research Progress of Metal(I) Substitution in Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells

Research Progress of Metal(I) Substitution in Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films

All-Vacuum-Deposited Bifacial Cu2ZnSnSe4 Photovoltaic Cells with Sputtered Cd-Free Buffer Layer

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Impact of silver incorporation at the back contact of Kesterite solar cells on structural and device properties

Cited by 9 publications

References 32 publications

Research Progress of Metal(I) Substitution in Cu2ZnSn(S,Se)4 Thin Film Solar Cells

Research Progress of Metal(I) Substitution in Cu2ZnSn(S,Se)4 Thin Film Solar Cells

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu0.5Ag0.5)2ZnSnSe4 Thin Films

All-Vacuum-Deposited Bifacial Cu2ZnSnSe4 Photovoltaic Cells with Sputtered Cd-Free Buffer Layer

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Product

Resources

About

Research Progress of Metal(I) Substitution in Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells

Research Progress of Metal(I) Substitution in Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films