Impact of SiGe HBT parameters to the performance of LNAs for highly sensitive SKA receivers

Bimana, Abadahigwa; Sinha, Saurabh

doi:10.1109/radioelek.2013.6530888

Cited by 6 publications

(4 citation statements)

References 16 publications

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“…A target LNA employing SiGe HBTs was designed and optimized for achieving balanced gain, matching, and noise performance [18,19]. The schematic of the designed SiGe LNA is shown in Figure 1 [20][21][22]. This topology has been widely used for a variety of narrowband applications due to key advantages such as the ability to provide a real impedance with non-resistive components, low-noise characteristics, and good isolation between the input and the output terminals [20][21][22].…”

Section: Lna Schematic and Device Modelingmentioning

confidence: 99%

“…The schematic of the designed SiGe LNA is shown in Figure 1 [20][21][22]. This topology has been widely used for a variety of narrowband applications due to key advantages such as the ability to provide a real impedance with non-resistive components, low-noise characteristics, and good isolation between the input and the output terminals [20][21][22]. Specifically, the LNA was based on a cascode common-emitter (Q 1 and Q 2 ) stage as a main stage [5] and the second stage (Q 3 and Q 4 ) acted as a buffer for output-impedance matching.…”

Section: Lna Schematic and Device Modelingmentioning

confidence: 99%

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Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Kim,

Ryu,

Lee

et al. 2024

Electronics

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In this study, the degradation characteristics of radio frequency (RF)-low-noise amplifiers (LNA) due to a total ionizing dose (TID) is investigated. As a device-under-test (DUT), sample LNAs were prepared using silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) as core elements. The LNA was based on a cascode stage with emitter degeneration for narrowband applications. By using a simplified small-signal model of a SiGe HBT, design equations such as gain, impedance matching, and noise figure (NF) were derived for analyzing TID-induced degradations in the circuit-level performance. To study radiation effects in circuits, the SiGe-RF-LNAs fabricated in a commercial 350 nm SiGe technology were exposed to 10-keV X-rays to a total ionizing dose of up to 3 Mrad(SiO2). The TID-induced performance changes of the LNA were modeled by applying degradation to device parameters. In the modeling process, new parameter values after irradiation were estimated based on information in the literature, without direct measurements of SiGe HBTs used in the LNA chip. As a result, the relative contributions of parameters on the circuit metrics were compared, identifying dominant parameters for degradation modeling. For the TID effects on input matching (S11) and NF, the base resistance (RB) and the base-to-emitter capacitance (Cπ) of the input transistor were mostly responsible, whereas the transconductances (gm) played a key role in the output matching (S22) and gain (S21). To validate the proposed approach, it has been applied to a different LNA in the literature and the modeling results predicted the TID-induced degradations within reasonable ranges.

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Section: Lna Schematic and Device Modelingmentioning

confidence: 99%

Section: Lna Schematic and Device Modelingmentioning

confidence: 99%

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Kim,

Ryu,

Lee

et al. 2024

Electronics

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“…In Ref. , a methodology for achieving simultaneous low noise and impedance matching for SiGe HBT based LNAs for the Square Kilometer Array (SKA) is proposed. Owing to the large number of receivers required for the SKA , cost‐effective LNAs are desired.…”

Section: Noise and Impedance Matching Techniques For Lnasmentioning

confidence: 99%

“…Impedance matching is achieved in a narrow frequency band whose bandwidth is determined by the quality factor Q in at the input. Narrow bandwidth refers to a bandwidth of less than 20% of the center frequency .…”

Section: Noise and Impedance Matching Techniques For Lnasmentioning

confidence: 99%

Increasing the bandwidth of a SiGe HBTLNA with minimum impact on noise figure

Bimana

Sinha

2016

Micro & Optical Tech Letters

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Abstract-This paper introduces a matching technique for highly sensitive integrated broadband low-noise amplifiers. Noise matching is achieved by the paralleling of identical input transistors. Impedance matching, based on reducing the number of components to the absolute minimum, is done by using the base-collector capacitance as network element. Using a 0.13 m silicon-germanium (SiGe) bipolar complementary metal oxide semiconductor process, simulation results indicate a maximum noise figure of 0.462 dB at room temperature and a return loss better than 10 dB from 300 MHz to 1.4 GHz. The technique demonstrates that SiGe heterojunction bipolar transistors can be used for cost-effective applications in radio astronomy.

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