Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition

Olubuyide, O.O.; Danielson, David T.; Kimerling, Lionel C.; Hoyt, Judy L.

doi:10.1016/j.tsf.2005.06.120

Cited by 37 publications

(22 citation statements)

References 5 publications

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“…The deposition of Ge-rich SiGe or pure Ge films on Si substrates usually requires thick graded buffer layers to reduce the threading dislocation density, but this also results in a high surface roughness and needs chemicalmechanical polishing (CMP) or requires the use of a surfactant to smooth the surface [25], [26]. To obtain smooth surfaces without these smoothing techniques, several groups have made attempts to directly grow Ge on Si by different epitaxy techniques, using two growth temperature steps [27]- [29].…”

Section: Device Fabrication and Experimental Methodsmentioning

confidence: 99%

Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si for Optical Modulators

Kuo

Lee

et al. 2006

IEEE J. Select. Topics Quantum Electron.

154

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Abstract-We present observations of quantum confinement and quantum-confined Stark effect (QCSE) electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates, in good agreement with theoretical calculations. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V quantum well structures at similar wavelengths. We also demonstrate that the effect can be seen over the C-band around 1.55-µm wavelength in structures heated to 90• C, similar to the operating temperature of silicon electronic chips. The physics of the effects are discussed, including the effects of strain, electron and hole confinement, and exciton binding, and the reasons why the effects should be observable at all in such an indirect gap material. This effect is very promising for practical high-speed, low-power optical modulators fabricated compatible with mainstream silicon electronic integrated circuits.Index Terms-Electroabsorption effect, germanium, optical interconnections, optical modulators, quantum-confined Stark effect (QCSE), silicon.

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Section: Device Fabrication and Experimental Methodsmentioning

confidence: 99%

Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si for Optical Modulators

Kuo

Lee

et al. 2006

IEEE J. Select. Topics Quantum Electron.

154

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“…Briefly, the devices are pin photodiodes fabricated in 1 μm-thick Ge layers grown selectively in oxide windows on 6" Si substrates, using low-pressure chemical vapor deposition in an Applied Materials epitaxial growth system [9]. Some of the wafers received an in-situ cyclic anneal between 830°C and 400°C to reduce the threading dislocation density while others were left unannealed.…”

Section: Measured Characteristics Of Ge-on-si Photodiodesmentioning

confidence: 99%

Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor

et al. 2010

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SiGe based Focal Plane Arrays offer a low cost alternative for developing visible-NIR focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based IRFPA's will take advantage of Silicon based technology, that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance comparison for the SiGe based VIS-NIR Sensor with performance characteristics of InGaAs, InSb, and HgCdTe based IRFPA's.Various approaches including device designs are discussed for reducing the dark current in SiGe detector arrays; these include Superlattice, Quantum dot and Buried junction designs that have the potential of reducing the dark current by several orders of magnitude. The paper also discusses approaches to reduce the leakage current for small detector size and fabrication techniques. In addition several innovative approaches that have the potential of increasing the spectral response to 1.8 microns and beyond. TECHNICAL DISCUSSIONThere is significant interest in developing low cost IR Sensors for a variety of applications such as low cost thermal imagers and the ability to detect and defeat incoming threats. There are several other technologies such as InGaAs, InSb and HgCdTe, which cover different part of the IR Spectrum. HgCdTe IR focal plane arrays are being developed for 3-5 and 8-14 micron applications [1]. InSb is being used for 3-5 micron applications [2].

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“…Briefly, the devices are pin photodiodes fabricated in 1.7 μm-thick Ge layers grown directly on 6" Si substrates, using low-pressure chemical vapor deposition in an Applied Materials epitaxial growth system [9]. After Ge growth, standard CMOS processes were used to deposit and pattern a dielectric (SiON) film to open up windows to the Ge surface.…”

Section: Measured Characteristics Of Ge-on-si Photodiodesmentioning

confidence: 99%

Development of SiGe arrays for visible-near IR applications

Sood

Richwine

Puri

et al. 2010

Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon

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SiGe based focal plane arrays offer a low cost alternative for developing visible-near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for SiGe devices with other Silicon-based technology for defense and Commercial Applications. TECHNICAL DISCUSSIONThere is significant interest in developing low cost IR Sensors for a variety of applications such as low cost thermal imagers and the ability to detect and defeat incoming threats. There are several other technologies such as InGaAs, InSb and HgCdTe, which cover different part of the IR Spectrum. HgCdTe IR focal plane arrays are being developed for 3-5 and 8-14 micron applications [1]. InSb is being used for 3-5 micron applications [2]. Similarly InGaAs offers an attractive approach for Visible-NIR sensors that can cover spectral band up to 1.8 microns [3]. SiGe offers a low cost alternative for developing Vis-NIR sensors that will not require any cooling and can operate from 0.4 to 1.6 micron [4,5]. The attractive features of SiGe based IRFPA's will take advantage of Silicon based technology with much larger substrates with up to 10 inch, that can promise very small feature size and compatibility with the Silicon CMOS circuit for signal processing. Large area silicon substrates have the potential of bring the cost down substantially compared with InGaAs. In addition, we will discuss new approaches that can further increase the spectral response to 2 microns and beyond. *

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Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition

Cited by 37 publications

References 5 publications

Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si for Optical Modulators

Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si for Optical Modulators

Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor

Development of SiGe arrays for visible-near IR applications

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