Impact of reduced pressure crystallization on ferroelectric properties in hafnium-zirconium dioxide films deposited by sputtering

Hara, Yuki; Mohit,; Murakami, Tatsuya; Migita, Shinji; Ota, Hiroyuki; Morita, Yukinori; Tokumitsu, Eisuke

doi:10.35848/1347-4065/ac1250

Cited by 9 publications

(11 citation statements)

References 33 publications

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“…A summary of previous studies on sputtered HZO ,,,,,− and this work is visualized in Figure . Most of the published results show that an annealing temperature higher than 500 °C was required to achieve good FE properties of the sputtered HZO films.…”

Section: Resultsmentioning

confidence: 99%

Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing

Wang

Mikolajick

Grube

2022

ACS Appl. Electron. Mater.

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The back-end-of-line (BEOL) processing compatibility of sputtered ferroelectric hafnium zirconium oxide (HZO) thin films is demonstrated on sputtered TiN/HZO/TiN thin-film ferroelectric capacitors. This promises an easy integration of HfO2-based ferroelectrics for applications such as non-volatile memories. It is found that the sputtering pressure can significantly influence the film growth and morphology of HZO layers. At a sputtering pressure of 5 × 10–3 mbar, deposited HZO films show high remanent polarization (P r) after 400 °C annealing, indicating a high fraction of the polar orthorhombic crystal structure. Additionally, the ferroelectric properties of HZO films were improved by proper tuning of sputtering power. We are able to show that a BEOL-compatible thermal budget (at 400 °C for 1 h) is enough to provoke good ferroelectricity with the 2P r of up to 36 μC/cm2 and an endurance of up to 107 cycles in sputtered HZO films. With such modifications, the sputtered HZO films become comparable to atomic-layer deposited HZO films with a similar thermal budget.

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Section: Resultsmentioning

confidence: 99%

Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing

Wang

Mikolajick

Grube

2022

ACS Appl. Electron. Mater.

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“…We applied the film to fabricate Pt/La-HZO/ITO/Pt metal-ferroelectric-semiconductor (MFS) structures to evaluate the stability of the o-phase because we found that the 8 at% La-HZO films annealed at 800 °C possessed good ferroelectric properties for the MFM structure. [23,24] We deposited a thin ITO layer by performing CSD on the La-HZO layer; it was crystallized at 800 °C. The CSD ITO channel layer was annealed at 600 °C in a N 2 or O 2 atmosphere.…”

Section: Electrical Properties Of Metal-ferroelectric-semiconductor S...mentioning

confidence: 99%

Fabrication of Ferroelectric Gate Thin‐Film Transistors with a Lanthanum‐Doped HZO Gate Insulator and Indium‐Tin‐Oxide Channel via a Solution Process

Mohit

Murakami

Tokumitsu

2022

Physica Rapid Research Ltrs

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In recent years, lanthanum‐doped hafnium–zirconium dioxide (La‐HZO) has garnered attention as a material for application in ferroelectric devices; moreover, atomic layer deposition has been applied to prepare La‐HZO films with metal–ferroelectric–metal structures. This article describes the fabrication of ferroelectric La‐HZO thin films on Pt/Ti/SiO2/Si substrates via a solution process. The dependence of the electrical properties on the La concentration of La‐HZO films annealed at 800 °C in vacuum is also discussed. The film with a La concentration of 8 at% exhibits the highest remanent polarization, whereas undoped HZO exhibits paraelectric behavior. Additionally, the leakage current of La‐HZO specimens tends to be significantly lower than that of undoped HZO. Furthermore, a higher annealing temperature corresponds to better ferroelectric properties and a lower leakage current. The characterization of fabricated ferroelectric gate thin‐film transistors (FGTs) with an 8 at% La‐HZO gate insulator and indium‐tin‐oxide channel is shown to confirm typical n‐channel transistor operation, i.e., a counterclockwise hysteresis loop in the transfer curve; this is attributable to the ferroelectric nature of the La‐HZO gate insulator. The results demonstrate that the proposed FGT design offers a low subthreshold voltage swing, high on/off drain current ratio of 106, large on‐current, and large memory window.

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“…16−18 The sputtering technique is an effective method for preparing HZO due to its low cost and flexible deposition conditions. 19 It was found that the best doping concentration of ferroelectric properties in the Hf X Zr 1−X O 2 system is X = 0.5. 20 In recent years, based on HfO 2 -based ferroelectric thin films, negative capacitance field-effect transistors (NCFETs) with different channels such as Si, Ge, WSe 2 , and MoS 2 have been investigated.…”

Section: ■ Introductionmentioning

confidence: 99%

“…HZO thin films have been widely studied in the past. , Most of the reported HZO films were deposited by atomic layer deposition (ALD). However, carbon contaminants are unavoidable in HZO films during the ALD process, which have a negative effect on the formation of the o-phase. − The sputtering technique is an effective method for preparing HZO due to its low cost and flexible deposition conditions . It was found that the best doping concentration of ferroelectric properties in the Hf X Zr 1– X O 2 system is X = 0.5 …”

Section: Introductionmentioning

confidence: 99%

Optimization of Subthreshold Swing and Hysteresis in Hf_0.5Zr_0.5O₂-Based MoS₂ Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

Guo

Wang

et al. 2023

ACS Appl. Mater. Interfaces

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Negative capacitance field effect transistors made of Hf0.5Zr0.5O2 (HZO) are one of the most promising candidates for low-power-density devices because of the extremely steep subthreshold swing and high open-state currents resulting from the addition of ferroelectric materials in the gate dielectric layer. In this paper, HZO thin films were prepared by magnetron sputtering combined with rapid thermal annealing. Their ferroelectric properties were adjusted by changing the annealing temperature and the thickness of HZO. Two-dimensional MoS2 back-gate negative capacitance field-effect transistors (NCFETs) based on HZO were prepared as well. Different annealing temperatures, thicknesses of HZO thin films, and Al2O3 thicknesses were studied to achieve optimal capacitance matching, aiming to reduce both the subthreshold swing of the transistor and the hysteresis of the NCFET. The NCFET exhibits a minimum subthreshold swing as low as 27.9 mV/decade, negligible hysteresis (∼20 mV), and the I ON/I OFF of up to 1.58 × 107. Moreover, a negative drain-induced barrier lowering effect and a negative differential resistance effect have been observed. This steep-slope transistor is compatible with standard CMOS manufacturing processes and attractive for 2D logic and sensor applications as well as future energy-efficient nanoelectronic devices with scaled power supplies.

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Impact of reduced pressure crystallization on ferroelectric properties in hafnium-zirconium dioxide films deposited by sputtering

Cited by 9 publications

References 33 publications

Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing

Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing

Fabrication of Ferroelectric Gate Thin‐Film Transistors with a Lanthanum‐Doped HZO Gate Insulator and Indium‐Tin‐Oxide Channel via a Solution Process

Optimization of Subthreshold Swing and Hysteresis in Hf_0.5Zr_0.5O₂-Based MoS₂ Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

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Impact of reduced pressure crystallization on ferroelectric properties in hafnium-zirconium dioxide films deposited by sputtering

Cited by 9 publications

References 33 publications

Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing

Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing

Fabrication of Ferroelectric Gate Thin‐Film Transistors with a Lanthanum‐Doped HZO Gate Insulator and Indium‐Tin‐Oxide Channel via a Solution Process

Optimization of Subthreshold Swing and Hysteresis in Hf0.5Zr0.5O2-Based MoS2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

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About

Optimization of Subthreshold Swing and Hysteresis in Hf_0.5Zr_0.5O₂-Based MoS₂ Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching