Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage Characteristics for Ultra-Thin-Body Germanium-On-Insulator MOSFETs

Yu, Chung Huang; Wu, Yusheng; Hu, Vita Pi‐Ho; Su, Pin

doi:10.7567/ssdm.2011.j-4-3

Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials 2011

DOI: 10.7567/ssdm.2011.j-4-3

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Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage Characteristics for Ultra-Thin-Body Germanium-On-Insulator MOSFETs

Chung Huang Yu

Yusheng Wu

Vita Pi‐Ho Hu

et al.

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Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage Characteristics for Ultra-Thin-Body Germanium-On-Insulator MOSFETs

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