Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition

Nguyen, An Hoang-Thuy; Nguyen, Manh-Cuong; Nguyen, Anh Gia-Tuan; Kim, Jeong‐Han; Park, No-Hwal; Jeon, Sanggeun; Kwon, Daewoong; Choi, Rino

doi:10.1186/s40580-022-00334-6

Cited by 6 publications

(4 citation statements)

References 32 publications

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“…This seminal study not only underscores the pivotal role played by heterogeneous metal interfaces, particularly Cu, in anode-free ZIBs but also underscores the critical significance of the microscopic attributes of these metal interfaces in determining the ZIBs performance. For metal materials, the grain size, − crystal orientation, and texture properties have different effects on their own performance indexes, so it is particularly important to study their effects in the anode-free application of zinc ion batteries.…”

Section: Introductionmentioning

confidence: 99%

Modulation of Interfacial Characteristics of Copper Electrode by Electrodeposited Cu@Ti for High-Performance Anode-Free Zinc Ion Batteries

Jing,

Meng,

Chen

et al. 2024

ACS Appl. Mater. Interfaces

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Preparation of the NC-Cu@Ti electrode involved electrochemical deposition of nanocrystalline copper on the surface of titanium foil using a constant potential method, intended for high stability anode-free zinc ion battery (ZIB) anode material applications. This paper examines the effect of Cu 2+ concentration in the electrodeposition solution on the structure and morphology of copper crystals on the NC-Cu@Ti electrode surface. The study also assesses how the interfacial properties of the NC-Cu@Ti electrode affect the process of anodic zinc deposition without anodic ZIBs. Our data suggest that with a voltage setting of −0.95 V and a copper ion concentration of 0.5 M in the solution, the deposition rate of copper crystals on the NC-

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Section: Introductionmentioning

confidence: 99%

Modulation of Interfacial Characteristics of Copper Electrode by Electrodeposited Cu@Ti for High-Performance Anode-Free Zinc Ion Batteries

Jing,

Meng,

Chen

et al. 2024

ACS Appl. Mater. Interfaces

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“…The optimization process of multiferroic heterostructures of our interest, based on bilayer systems of ferromagnetic materials such as the hexaferrite BaFe 12 O 19 and ferroelectric materials such as LuFeO 3 and YbFeO 3 , crucially requires first a high-quality bottom electrode, which remains stable at elevated growth temperatures Tg > 900 °C in an oxidizing atmosphere during the pulsed laser deposition (PLD) growth of the above-mentioned subsequent layers [ 1 , 2 , 3 , 4 , 5 ]. Platinum is one of the noble metals, and is widely used in the application field of metal-ferroelectric-metals (MFMs) [ 6 , 7 , 8 ], ferroelectric memories [ 9 ], and microelectromechanical systems (MEMSs) [ 10 ] due to its high melting point, inertness in hard atmospheres, and low resistivity. Several studies have reported the effects of the structure and morphology of the bottom electrode on the performance of ferroelectric films and MEMSs [ 7 , 8 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

Structural and Morphological Studies of Pt in the As-Grown and Encapsulated States and Dependency on Film Thickness

Nergis,

Bauer,

Jin

et al. 2024

Nanomaterials

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The morphology and crystal structure of Pt films grown by pulsed laser deposition (PLD) on yttria-stabilized zirconia (YSZ)at high temperatures Tg = 900 °C was studied for four different film thicknesses varying between 10 and 70 nm. During the subsequent growth of the capping layer, the thermal stability of the Pt was strongly influenced by the Pt film’s thickness. Furthermore, these later affected the film morphology, the crystal structure and hillocks size, and distribution during subsequent growth at Tg = 900 °C for a long duration. The modifications in the morphology as well as in the structure of the Pt film without a capping layer, named also as the as-grown and encapsulated layers in the bilayer system, were examined by a combination of microscopic and scattering methods. The increase in the thickness of the deposited Pt film brought three competitive phenomena into occurrence, such as 3D–2D morphological transition, dewetting, and hillock formation. The degree of coverage, film continuity, and the crystal quality of the Pt film were significantly improved by increasing the deposition time. An optimum Pt film thickness of 70 nm was found to be suitable for obtaining a hillock-free Pt bottom electrode which also withstood the dewetting phenomena revealed during the subsequent growth of capping layers. This achievement is crucial for the deposition of functional bottom electrodes in ferroelectric and multiferroic heterostructure systems.

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“…[5] Otherwise, it will be retained. Ferroelectric-based components including ferroelectric capacitor, [6][7][8][9][10][11][12] ferroelectric random-access memory (FeRAM), [13][14][15] ferroelectric field effect DOI: 10.1002/smll.202305271 transistor (FeFET), [16][17][18][19][20][21][22] ferroelectric diode (Fe-Diode), [23][24][25] and ferroelectric tunnel junction (FTJ) are also thought to be viable options for low-power non-volatile memory with two stable states.…”

Section: Introductionmentioning

confidence: 99%

Physics, Structures, and Applications of Fluorite‐Structured Ferroelectric Tunnel Junctions

Hwang,

Goh,

Jeon

2023

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The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of ferroelectricity in fluorite‐structured oxides such as HfO2 and ZrO2. In terms of thickness scaling, CMOS compatibility, and 3D integration, these fluorite‐structured FTJs provide a number of benefits over conventional perovskite‐based FTJs. Here, recent developments involving all FTJ devices with fluorite structures are examined. The transport mechanism of fluorite‐structured FTJs is explored and contrasted with perovskite‐based FTJs and other 2‐terminal resistive switching devices starting with the operation principle and essential parameters of the tunneling electroresistance effect. The applications of FTJs, such as neuromorphic devices, logic‐in‐memory, and physically unclonable function, are then discussed, along with several structural approaches to fluorite‐structure FTJs. Finally, the materials and device integration difficulties related to fluorite‐structure FTJ devices are reviewed. The purpose of this review is to outline the theories, physics, fabrication processes, applications, and current difficulties associated with fluorite‐structure FTJs while also describing potential future possibilities for optimization.

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Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition

Cited by 6 publications

References 32 publications

Modulation of Interfacial Characteristics of Copper Electrode by Electrodeposited Cu@Ti for High-Performance Anode-Free Zinc Ion Batteries

Modulation of Interfacial Characteristics of Copper Electrode by Electrodeposited Cu@Ti for High-Performance Anode-Free Zinc Ion Batteries

Structural and Morphological Studies of Pt in the As-Grown and Encapsulated States and Dependency on Film Thickness

Physics, Structures, and Applications of Fluorite‐Structured Ferroelectric Tunnel Junctions

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