Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors

Wang, Guibao; Peng, Bo; Yuan, Lei; Zhang, Yuming; Jia, Renxu

doi:10.1109/ted.2024.3405473

IEEE Trans. Electron Devices

2024

DOI: 10.1109/ted.2024.3405473

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Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors

Guibao Wang,

Bo Peng,

Lei Yuan

et al.

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Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors

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