Impact of Preferential Indium Nucleation on Electrical Conductivity of Vapor–Liquid–Solid Grown Indium–Tin Oxide Nanowires

Meng, Guodong; Yanagida, Takeshi; Nagashima, Kazuki; Yoshida, Hideto; Kanai, Masaki; Klamchuen, Annop; Zhuge, Fuwei; He, Yabai; Rahong, Sakon; Fang, Xiaodong; Takeda, Seiji; Kawai, Tomoji

doi:10.1021/ja401926u

Cited by 45 publications

(45 citation statements)

References 41 publications

(67 reference statements)

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“…1(a) implying that Sn plays a key role in the growth of ITO NWs. More specifically, we find that the ITO NWs do not grow on plain Si(001) and have spherical NPs on their ends suggesting that they grow by the VLS mechanism consistent with Meng et al 12 who also showed that the Au NP on the end of the ITO NWs is richer in Sn than In. The high-resolution XRD patterns of the ITO NWs obtained for different % In contents are shown in Fig.…”

confidence: 90%

“…So far ITO NWs have been grown by carbothermal reduction of In 2 O 3 and SnO 2 5 but the control of stoichiometry is not trivial as it has been observed that SnO 2 NWs may be obtained even when a higher content of In 2 O 3 is used during carbothermal reduction carried out under an inert gas flow at elevated temperatures 10,11 which also leads to the non-intentional incorporation of carbon. In addition ITO NWs have been grown by pulsed laser deposition (PLD) of In 2 O 3 and SnO 2 as shown recently by Meng et al 12 Furthermore, ITO NWs have been obtained from the reaction of In and Sn with O 2 by reactive vapor transport as both metals have low melting points of 157 • C and 232 • C, respectively, and similar vapor pressures. For instance, Chiu et al 13 obtained ITO NWs at 900 • C under a flow of Ar by using 20 nm diameter Au nanoparticles (NPs) on Si(001) and a fixed In:Sn source weight ratio of 9:1 while Chang et al 14 used a fixed In:Sn source weight ratio of 9:1 and obtained ITO NWs on 5 nm Au/Si(001) at 600 • C using Ar,H 2 and O 2 .…”

confidence: 99%

“…However, despite all of these efforts only few have investigated in detail the incorporation of Sn and the changes that occur in the crystal structure of ITO NWs by changing the In:Sn source ratio over a broad range. 5,12 For instance, Meng et al 12 obtained 20 at. % Sn in their ITO NWs using PLD by varying the In 2 O 3 :SnO 2 ratio of their target so that the corresponding Sn:In + Sn at.…”

confidence: 99%

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Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism

et al. 2014

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Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at 800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by using In:Sn source weight ratios > 1:9 while below this we observe the emergence of tetragonal rutile SnO2 and suppression of In2O3 permitting compositional and structural tuning from SnO2 to In2O3 which is accompanied by a blue shift of the photoluminescence spectrum and increase in carrier lifetime attributed to a higher crystal quality and Fermi level position.

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confidence: 90%

confidence: 99%

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Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism

et al. 2014

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“…Note that these nanowires are entirely composed of the metastable ISO crystal phase, which is in sharp contrast to previous reports that showed the partial ISO crystal phase within nanowires. 24,26 The detailed microstructural analysis of ISO nanowires can be seen in ESI - Fig. S1.…”

Section: Introductionmentioning

confidence: 99%

A flux induced crystal phase transition in the vapor–liquid–solid growth of indium-tin oxide nanowires

et al. 2014

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Single crystalline metal oxide nanowires formed via a vapor-liquid-solid (VLS) route provide a platform not only for studying fundamental nanoscale properties but also for exploring novel device applications. Although the crystal phase variation of metal oxides, which exhibits a variety of physical properties, is an interesting feature compared with conventional semiconductors, it has been difficult to control the crystal phase of metal oxides during the VLS nanowire growth. Here we show that a material flux critically determines the crystal phase of indium-tin oxide nanowires grown via the VLS route, although thermodynamical parameters, such as temperature and pressure, were previously believed to determine the crystal phase. The crystal phases of indium-tin oxide nanowires varied from the rutile structures (SnO2), the metastable fluorite structures (InxSnyO3.5) and the bixbyite structures (Sn-doped In2O3) when only the material flux was varied within an order of magnitude. This trend can be interpreted in terms of the material flux dependence of crystal phases (rutile SnO2 and bixbyite In2O3) on the critical nucleation at the liquid-solid (LS) interface. Thus, precisely controlling the material flux, which has been underestimated for VLS nanowire growths, allows us to design the crystal phase and properties in the VLS nanowire growth of multicomponent metal oxides.

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“…Details of the nanowire fabrication conditions can be found elsewhere. [18][19][20][21] To prepare the 3D nanopore structure device, the Au catalyst particles were deposited along the nanowire by DC sputtering and the SnO2 nanowires were grown cyclically using the PLD system six times. The Cr layer was removed by the Cr etchant solution.…”

Section: Fabrication Of the Self-assembled Nanowire Arrays Embedded Imentioning

confidence: 99%

Self-assembled Nanowire Arrays as Three-dimensional Nanopores for Filtration of DNA Molecules

et al. 2015

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Molecular filtration and purification play important roles for biomolecule analysis. However, it is still necessary to improve efficiency and reduce the filtration time. Here, we show self-assembled nanowire arrays as three-dimensional (3D) nanopores embedded in a microfluidic channel for ultrafast DNA filtration. The 3D nanopore structure was formed by a vapor-liquid-solid (VLS) nanowire growth technique, which allowed us to control pore size of the filtration material by varying the number of growth cycles. λ DNA molecules (48.5 kbp) were filtrated from a mixture of T4 DNA (166 kbp) at the entrance of the 3D nanopore structure within 1 s under an applied electric field. Moreover, we observed single DNA molecule migration of T4 and λ DNA molecules to clarify the filtration mechanism. The 3D nanopore structure has simplicity of fabrication, flexibility of pore size control and reusability for biomolecule filtration. Consequently it is an excellent material for biomolecular filtration.

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Impact of Preferential Indium Nucleation on Electrical Conductivity of Vapor–Liquid–Solid Grown Indium–Tin Oxide Nanowires

Cited by 45 publications

References 41 publications

Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism

Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism

A flux induced crystal phase transition in the vapor–liquid–solid growth of indium-tin oxide nanowires

Self-assembled Nanowire Arrays as Three-dimensional Nanopores for Filtration of DNA Molecules

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