2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2016 Help me understand this report
Impact of power electronic device development on power grids
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Cited by 10 publications
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“…In this way, it merges the benefits of both the GTO and MOSFET with clear advantages with respect to the IGCT. As of 2016, ratings as high as 8.5 kV/5 kA for SCRs, 6.5 kV/3.8 kA for IGCTs, 6.5 kV/0.75 kA for IGBTs, and 4.5 kV/4 kA for ETOs have been achieved [22].…”
Section: Massimo Guarnierimentioning
confidence: 99%
“…In this way, it merges the benefits of both the GTO and MOSFET with clear advantages with respect to the IGCT. As of 2016, ratings as high as 8.5 kV/5 kA for SCRs, 6.5 kV/3.8 kA for IGCTs, 6.5 kV/0.75 kA for IGBTs, and 4.5 kV/4 kA for ETOs have been achieved [22].…”
Section: Massimo Guarnierimentioning
confidence: 99%
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