Impact of post deposition annealing in N2 ambient on structural properties of nanocrystalline hafnium oxide thin film

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

“…Their results showed that there were optimal annealing temper atures for different film materials. Interestingly, the results in [133,134] showed that the surface roughness of the thin films increased after annealing as compared to the as-deposited ones, though it might decrease with the annealing temper ature. For example, Husna et al [134] found that σ RMS of the deposited thin films was 6.83, 7.26, 7.20, 14.90 and 8.67 nm annealed 250, 350, 450 and 500 °C, respectively.…”

“…However, many researchers have found that the surface roughness of the deposited films does not always increase with the annealing temperature [131][132][133][134], as shown in table 7. For example, Pandey et al [131] found that σ RMS of the deposited films was 19.70, 8.46, 14.80 and 13.2 nm when T an was 400, 600, 800 and 1000 °C, respectively.…”