Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate

Cheng, Chao-Ching; Chien, Chao–Hsin; Chen, Ching-Wei; Hsu, S.L.; Yang, Mingyi; Huang, Chihpin; Yang, Fu-Liang; Chang, Ching-Chien

doi:10.1016/j.mee.2005.04.033

Cited by 14 publications

(2 citation statements)

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“…This can be attributed to either the surface preparation prior to nitridation and/or nitridation condition and temperature. The electrical properties of different deposited high-k materials on Ge are compared in table 2 [24][25][26].…”

Section: Dielectric-substrate Interface Analysismentioning

confidence: 99%

TiO₂/GeO_xN_ystacked gate dielectrics for Ge-MOSFETs

Bera

Mahata

Chakraborty

et al. 2007

Semicond. Sci. Technol.

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In this work, we present the results of physical and electrical characterization of Ti-based high-k gate dielectrics on Ge substrates. Titanium tetrakis isopropoxide (TTIP) was used as the organometallic source for the deposition of ultra-thin TiO 2 films on p-Ge (1 0 0) at low temperature (<200 • C) by plasma enhanced chemical vapor deposition (PECVD) technique in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of ∼65 Pa. The presence of an ultra-thin lossy GeO 2 interfacial layer between the deposited high-k film and the substrate, results in frequency-dependent capacitance-voltage (C-V) characteristics in strong accumulation and a high interface state density (∼10 13 cm −2 eV −1 ). To improve the electrical properties, nitrogen engineering has been employed to convert the lossy GeO 2 interfacial layer to its oxynitride, thus forming TiO 2 /GeO x N y /Ge stacked-gate structure with improved interface/electrical properties. Different N sources, such as NO, NH 3 and NO/NH 3 , have been used for nitrogen engineering. XPS and Raman spectroscopy analyses have been used for surface morphological study. Electrical properties, such as gate leakage current density, interface state density, charge trapping, flatband voltage shift, etc, have been studied in detail for TiO 2 /GeO x N y /Ge MIS capacitors using the current-voltage (I-V), capacitance-voltage (C-V), conductance-voltage (G-V) and stress (both constant voltage and current) measurements. Although a significant improvement in electrical characteristics has been observed after nitridation in general, the formation of the interfacial GeO x N y layer, obtained from NO-plasma nitridation, is found to provide the maximum improvement among all the nitridation techniques used in this study. It is shown that the insertion of an ultra-thin oxynitride (GeO x N y ) interfacial layer is advantageous for producing gate-quality TiO 2 high-k dielectric stacks on Ge substrates.

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Section: Dielectric-substrate Interface Analysismentioning

confidence: 99%

TiO₂/GeO_xN_ystacked gate dielectrics for Ge-MOSFETs

Bera

Mahata

Chakraborty

et al. 2007

Semicond. Sci. Technol.

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“…Also, lower leakage current density in HfO x N y is widely reported due to suppression of oxygen vacancy traps [50]. It has been reported that nitrogen incorporation in HfO 2 can be achieved by several methods mostly by nitrogen ambient plasmabased nitridation [47,50] or ammonia (NH 3 ) ambient high-temperature annealing treatment [52,53]. For Si-based MOS studies, the later approach is known to be very powerful for achieving good uniformity of nitrogen incorporation and excellent interface quality due to the absence of plasma damage.…”

Section: Development Of Ipa-based Ald Hfo 2 On N-type Ingaas Substratesmentioning

confidence: 99%

Development and Characterization of High-Quality HfO₂/InGaAs MOS Interface

Eom¹,

Kong²,

Seo³

2020

Recent Advances in Nanophotonics - Fundamentals and Applications

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The scope of this chapter is to introduce a highly efficient HfO2 atomic layer deposition (ALD) process with superior interface defect characteristics that can be applied on high-mobility III-V substrates. For a long time, the major academic research of III-V metal-oxide-semiconductor (MOS) studies was mainly oriented on searching for the suitable high-k dielectric, and among the reported high-k/III-V MOS studies, Al2O3 and AlN have demonstrated the most promising results. However, usually, the dielectrics with higher dielectric constant suffered from more defective interface quality including the HfO2, which should be overcome to meet the intensive operation voltage scaling requirements. In order to protect the interface of the HfO2/III-V MOS, the exposed III-V surface has to be carefully treated before, while, and after the whole high-k deposition process. For this purpose, the effect of isopropyl alcohol precursor and in situ cyclic nitrogen plasma treatment on the HfO2 ALD process at III-V substrates was thoroughly investigated. Remarkable interface state density levels with strong inversion behavior were achieved, which have not been observed at the previous HfO2/InGaAs studies. Also, detailed analysis of the interface characteristics was investigated to broaden the understanding of the improvement phenomenon.

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