Impact of plasma enhanced atomic layer deposited HfO2 buffer layer on the structural, electrical and ferroelectric properties of metal/ferroelectric/insulator/semiconductor gate stack for non-volatile memory applications

Jha, Rajesh Kumar; Singh, Prashant; Goswami, Manish; Singh, Bhawna

doi:10.1007/s10854-019-01895-9

J Mater Sci: Mater Electron

2019

DOI: 10.1007/s10854-019-01895-9

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Impact of plasma enhanced atomic layer deposited HfO2 buffer layer on the structural, electrical and ferroelectric properties of metal/ferroelectric/insulator/semiconductor gate stack for non-volatile memory applications

Rajesh Kumar Jha

Prashant Singh

Manish Goswami

et al.

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Impact of plasma enhanced atomic layer deposited HfO2 buffer layer on the structural, electrical and ferroelectric properties of metal/ferroelectric/insulator/semiconductor gate stack for non-volatile memory applications

Cited by 4 publications

References 39 publications

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