Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS₂ and p-MoTe₂ Transistors

Abstract

Since transition metal dichalcogenide (TMD) semiconductors are found as two-dimensional van der Waals materials with a discrete energy bandgap, many TMD based field effect transistors (FETs) are reported as prototype devices. However, overall reports indicate that threshold voltage (V th) of those FETs are located far away from 0 V whether the channel is p- or n-type. This definitely causes high switching voltage and unintended OFF-state leakage current. Here, a facile way to simultaneously modulate the V th of both p- and n-channel FETs with TMDs is reported. The deposition of various organic small molecules on the channel results in charge transfer between the organic molecule and TMD channels. Especially, HAT-CN molecule is found to ideally work for both p- and n-channels, shifting their V th toward 0 V concurrently. As a proof of concept, a complementary metal oxide semiconductor (CMOS) inverter with p-MoTe2 and n-MoS2 channels shows superior voltage gain and minimal power consumption after HAT-CN deposition, compared to its initial performance. When the same TMD FETs of the CMOS structure are integrated into an OLED pixel circuit for ambipolar switching, the circuit with HAT-CN film demonstrates complete ON/OFF switching of OLED pixel, which was not switched off without HAT-CN.

Effect of the Interfacial Energy Landscape on Photoinduced Charge Generation at the ZnPc/MoS2 Interface

“…They can be combined with TMDCs, which have outstanding and gate-tunable carrier mobility, to produce sensitive detectors and gatetunable p-n junctions. [8][9][10][11][12][13][14] More excitingly, the hybrid system can realize new properties and functionalities that neither materials can provide. For example, atomically-thin lateral 15 and vertical p-n junctions 16 can be fabricated in a scalable fashion by doping TMDCs with organic molecules.…”

Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2

“…It should be mentioned that our result of power consumption is quite comparable to those of other research group (see Figure S7 and Table S1, Supporting Information). [ 47–50 ] Moreover, positive transition voltages along with minimized power consumption is very meaningful in designing CMOS circuit. Noise margin (NM L and NM H ) values are also estimated at a V DD of 3 V, to be 0.27 and 0.35 V DD , respectively, which are found in Figure S8 (Supporting Information) and quite comparable to those in previous literature.…”

Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications

“…The electrical properties can be controlled through TMD doping, and various applications of photodetectors [84,86], complementary circuits [73,74], and neuromorphic devices [89] have been actively demonstrated. As the doping techniques modulate the energy band of TMDs, not only electrical properties but also optical properties can be improved through doping [4,7,84,86,89,90,94,96].…”

“…Higher photoresponsivity and temporal photoresponse performance could be achieved by the surface charge transfer doping. Another application is to build complementary circuits by selective doping of TMDs [73,74,80,81,94]. Pristine TMD devices suffer from ambipolar characteristics, normally-on operation due to V TH shift, and contact resistance, which limit implementation to complementary circuits.…”