Impact of Novel Pad Groove Designs on Removal Rate and Uniformity of Dielectric and Copper CMP

Doy, Toshiroh Karaki; Seshimo, Kiyoshi; Suzuki, Keisuke; Philipossian, Ara; Kinoshita, Masaki

doi:10.1149/1.1646144

Cited by 23 publications

(20 citation statements)

References 4 publications

(3 reference statements)

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“…The grooves or perforations on the polishing pads have a significant impact on the polishing mechanism and outcome [15,16]. Grooves or perforations on the pad allow an effective slurry flow under the wafer surface and thus are very crucial for an effective CMP process.…”

Section: Polishing Pad Characteristicsmentioning

confidence: 99%

Tribometrology of CMP Process

Gitis¹,

Mudhivarthi²

2007

Microelectronic Applications of Chemical Mechanical Planarization

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NORM GITIS AND RAGHU MUDHIVARTHI INTRODUCTIONStudies of mechanical and chemical-mechanical surface finishing treatments have long been a part of tribology, a science of friction and wear (material removal). During chemical-mechanical polishing or planarization (CMP), surfaces of both the object being treated (e.g., the semiconductor wafer) and the finishing tool (e.g., the polishing pad), together with the polishing slurry between them, constitute a rather classical tribological system. This is sometimes referred to as a three-body interface [1-3], because it includes two solids in relative motion and the slurry containing abrasive particles at the interface. Modern CMP machines may have an abrasive pad conditioner rubbing the pad during wafer polishing, which keeps one of the surfaces in a state of constant change. A tribological system is typically characterized by classical parameters of the coefficient of friction between the surfaces and by their wear rate.The field of tribology has seen a number of theoretical models for various materials and interfaces [4]. Based on these models, the formulas for the calculation of both friction and wear have been derived. Unfortunately, these equations cannot be used directly by process and equipment design engineers unless the coefficient is known. Indeed, friction and wear properties of a tribological interface depend on macro-, micro-, and nanogeometry of the Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li

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Section: Polishing Pad Characteristicsmentioning

confidence: 99%

Tribometrology of CMP Process

Gitis¹,

Mudhivarthi²

2007

Microelectronic Applications of Chemical Mechanical Planarization

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“…It has also been shown that (1) mostly applies to hard-pad CMP systems while RR is proportional to P 1.5 instead of P for soft-pad CMP systems [22]. More complete and accurate CMP models can be found in the literature [23][24][25][26][27][28][29]. CMP of polymer materials such as BCB polymers is more challenging than inorganic materials such as silicon dioxide and metals.…”

Section: Planarization Of Bcb Polymersmentioning

confidence: 99%

Embedded benzocyclobutene in silicon: An integrated fabrication process for electrical and thermal isolation in MEMS

Modafe

Ghalichechian

Powers

et al. 2005

Microelectronic Engineering

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“…All of these features affect surface fluid transport. [5][6][7][8][9][10] • Pad and wafer both co-rotate during the entire process (either clockwise, or counter-clockwise). This causes advective transport in the radial direction along with centrifugal forces that grow stronger near the edge of the pad.…”

mentioning

confidence: 99%

Effect of Various CVD-Coated Conditioning Disc Designs and Polisher Kinematics on Fluid Flow Characteristics during CMP

Mariscal

Sampurno

Slutz

et al. 2020

ECS J. Solid State Sci. Technol.

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A novel experimental technique utilizing UV-enhanced fluorescence was developed and used to measure fluid film thicknesses and general flow patterns during conditioning on a polishing pad. The method was successfully applied to several case studies for analyses of how conditioners with different working face designs (i.e. complex vane, full-face and partial-face), in conjunction with different platen angular velocities, affected fluid transport. In general, for all discs types, fluid across the pad followed similar trends where films were thickest near the wafer track center and thinnest near the pad edge (measurements showed a thickness range of appx. 0.5 to 1.1 mm). For all discs, the time for the film thicknesses to reach steady-state increased in proportion to the distance away from the pad center (times ranged between 12 and 62 s). The full-face conditioner consistently produced the thinnest films and reached steady-state the fastest. In contrast, the complex vane conditioner created the thickest films and took longest to reach steady-state. The work demonstrated the significance of understanding and visualizing the mechanisms that can contribute to fluid transport during CMP and how our novel technique could contribute, in the near future, to a greater understanding of fluid transport during in-situ conditioning.

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Impact of Novel Pad Groove Designs on Removal Rate and Uniformity of Dielectric and Copper CMP

Cited by 23 publications

References 4 publications

Tribometrology of CMP Process

Tribometrology of CMP Process

Embedded benzocyclobutene in silicon: An integrated fabrication process for electrical and thermal isolation in MEMS

Effect of Various CVD-Coated Conditioning Disc Designs and Polisher Kinematics on Fluid Flow Characteristics during CMP

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