Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozone

“…There is also an implication about the possibility to atomic layer deposition of [29], although the details of the process have remained beyond the scope of that study. ZrO 2 films have been grown on electrodes assumptionally most relevant to the particular applications, such as on silicon under potential gate dielectrics [20,22] or titanium nitride for memory capacitors [7][8][9]23]. Certain issues related to the increment of leakage currents due to the roughness of TiN electrodes have been pointed out [31].…”

“…Often, both precursors contain hydrogen and thus the residual hydrogen content could be diminished after substituting either one or both precursors by hydrogen-free ones. ZrO 2 films have been grown by several water-free ALD processes [21], such as in those based on (C 5 H 5 )Zr(N(CH 3 ) 2 ) 3 and oxygen plasma [7,22], Zr[N(CH 3 ) 2 ] 4 and O 3 [14], Zr[N(CH 3 )(C 2 H 5 )] 4 and O 3 [6,9,11,23], Cp 2 ZrCl 2 and O 3 [13,24], or Zr(NEtMe) 3 (guanNEtMe) and O 3 [25]. Regarding metal halide based and hydrogen-free ALD processes, depositions of Al 2 O 3 from AlCl 3 and O 3 [26], TiO 2 from TiCl 4 and O 3 [27], Ta 2 O 5 from TaCl 5 and O 3 [28], HfO 2 from HfCl 4 and O 3 [29], and HfO 2 from HfI 4 and O 2 [30] have been reported.…”

Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack

“…On the other hand, nitrogen incorporation in high-k dielectrics has been intensively researched. Nitrogen incorporation in high-k films showed an enhanced dielectric constant [8][9], increase in crystalline temperature [10], and suppressed gate leakage [11][12][13][14]. All of which show promising properties to further increase and stabilize the threshold voltage of the E-mode FEG-HEMT.…”