2019
DOI: 10.1021/acs.inorgchem.9b00304
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Impact of Nb(V) Substitution on the Structure and Optical and Photoelectrochemical Properties of the Cu5(Ta1–xNbx)11O30 Solid Solution

Abstract: A family of solid solutions, Cu 5 (Ta 1−x Nb x ) 11 O 30 (0 ≤ x ≤ 0.4), was investigated as p-type semiconductors for their band gaps and energies and for their activity for the reduction of water to molecular hydrogen. Compositions from 0 to 40 mol % niobium were prepared in high purity by solid-state methods, accompanied by only very small increases in the lattice parameters of ∼0.05% and with the niobium and tantalum cations disordered over the same atomic sites. However, an increasing niobium content cause… Show more

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Cited by 13 publications
(18 citation statements)
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References 45 publications
(89 reference statements)
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“…Shown in Figure A for NaCu­(Ta 1– x Nb x ) 4 O 11 , the bandgap undergoes a significant red-shift from ∼2.70 eV to ∼1.80 eV with increasing Nb content from 0% to 70%. For Cu 5 Ta 11– x Nb x O 30 , this gives a bandgap red shift from ∼2.58 eV to ∼1.97 eV . For both semiconductors, the red-shifting is caused by replacing Ta 5d 0 orbitals with Nb 4d 0 orbitals and lowering the conduction-band energy.…”
Section: Mixed-metal Oxide (M′mo X ) Semiconductorsmentioning
confidence: 97%
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“…Shown in Figure A for NaCu­(Ta 1– x Nb x ) 4 O 11 , the bandgap undergoes a significant red-shift from ∼2.70 eV to ∼1.80 eV with increasing Nb content from 0% to 70%. For Cu 5 Ta 11– x Nb x O 30 , this gives a bandgap red shift from ∼2.58 eV to ∼1.97 eV . For both semiconductors, the red-shifting is caused by replacing Ta 5d 0 orbitals with Nb 4d 0 orbitals and lowering the conduction-band energy.…”
Section: Mixed-metal Oxide (M′mo X ) Semiconductorsmentioning
confidence: 97%
“…As described below, crystalline semiconductors containing new combinations of these M/M′ cations have been prepared in my laboratory and others and investigated for their photoelectrochemical properties. , Many representatives within these systems are listed in Table in order of increasing band gaps. Notably, a predominant fraction of ∼80% of these semiconductors has been found to occur as thermodynamically unstable phases, as denoted in the right-hand column.…”
Section: Mixed-metal Oxide (M′mo X ) Semiconductorsmentioning
confidence: 99%
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