Impact of Morphological Features on the Dielectric Breakdown at SiO[sub 2]∕3C-SiC Interfaces

Eriksson, Jens; Roccaforte, Fabrizio; Weng, Ming Hung; Lorenzzi, Jean; Jegenyés, Nikoletta; Giannazzo, Filippo; Fiorenza, Patrick; Raineri, V.; Ferro, Gabriel; Siffert, P.

doi:10.1063/1.3518308

Cited by 3 publications

(2 citation statements)

References 11 publications

(17 reference statements)

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“…It can also distinguish differences within grains and at grain boundaries by nanoscale resolution. Eriksson et al [47] conducted local stress tests on SiO 2 /3C-SiC interfaces through C-AFM, and studied the influence of different defects on the breakdown electric field of devices. They found that step-bunching of different heights on the surface of 3C-SiC would lead to the increase of local electric field strength, resulting in the breakdown of devices.…”

Section: C-afmmentioning

confidence: 99%

Surface defects in 4H-SiC: properties, characterizations and passivation schemes

Mao

Cui

Xiong

et al. 2023

Semicond. Sci. Technol.

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Silicon carbide (SiC) is a typical wide band-gap semiconductor material, and exhibit excellent physical properties like high electron saturated drift velocity, high breakdown field, etc. SiC material contains many polytypes, among them, 4H-SiC is almost the most popular polytype as it possesses suitable band-gap and high electron saturated drift velocity. In order to produce 4H-SiC power devices with high barrier voltage over several thousand volts, minority carrier lifetime of 4H-SiC single crystal must be carefully managed. In general, both bulk defects and surface defects in 4H-SiC can reduce the minority carrier lifetime. Nevertheless, as surface defects have received less attention in publications, this study reviews surface defects in 4H-SiC. Surface defects in 4H-SiC can be classified into a number of categories like triangle defect、pit、carrot, etc. This paper discusses each one individually followed by the introduction of industrial feasible methods to characterize them. Subsequently, the impact of surface defects on minority carrier lifetime is analyzed and discussed. At last, a particular emphasis is put on discussing various passivation schemes and their effects on minority carrier lifetime of 4H-SiC single crystal. Overall, this review paper aims to help young researchers comprehend surface defects in 4H-SiC single crystal material.

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Section: C-afmmentioning

confidence: 99%

Surface defects in 4H-SiC: properties, characterizations and passivation schemes

Mao

Cui

Xiong

et al. 2023

Semicond. Sci. Technol.

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show abstract

“…As an example, while the behavior of thin thermally grown oxides onto 4H-SiC is ideal [5,6], thicker thermal oxides (>10 nm) deviates from the ideal percolation theory, probably due to the presence of carbonrelated defects in the oxide [7,8]. Moreover, premature breakdown in SiO2/4H-SiC system has been also attributed to the presence of crystalline defects (pipes, carrots, bars, etc) [9], and to the step-bunching on the 4H-SiC surface [10,11]. Fig.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress

Fiorenza

Alessandrino

Carbone

et al. 2020

MSF

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In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence between the location of the breakdown event and a threading dislocation propagating through the epitaxial layer was found. Scanning probe microscopy (SPM) revealed the conductive nature of the threading dislocation and a local modification of the minority carriers concentration. Basing on these results, the role of the threading dislocation on the failure of 4H-SiC MOSFETs could be clarified.

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Anodic formation of nanoporous and nanotubular metal oxides

Zhou

Jiang

et al. 2012

J. Mater. Chem.

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Impact of Morphological Features on the Dielectric Breakdown at SiO[sub 2]∕3C-SiC Interfaces

Cited by 3 publications

References 11 publications

Surface defects in 4H-SiC: properties, characterizations and passivation schemes

Surface defects in 4H-SiC: properties, characterizations and passivation schemes

Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress

Anodic formation of nanoporous and nanotubular metal oxides

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