Impact of micro-texturization on hybrid micro/nano-textured surface for enhanced broadband light absorption in crystalline silicon for application in photovoltaics

Abdulkadir, Auwal; Aziz, Azlan Abdul; Pakhuruddin, Mohd Zamir

doi:10.1016/j.mssp.2019.104728

Cited by 32 publications

(15 citation statements)

References 33 publications

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“…After the b-Si nanowires formation, all samples demonstrate lower broadband reflectance, which leads to enhanced light absorption throughout the wavelength region. This is due to refractive index grading effect at the interface of air and b-Si caused by nanowires with dimensions lesser than the wavelength of the incident light [28]. This leads to increased broadband light coupling into the b-Si absorber.…”

Section: Resultsmentioning

confidence: 99%

Effects of silver nanoparticles layer thickness towards properties of black silicon fabricated by metal-assisted chemical etching for photovoltaics

2020

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This paper investigates effects of silver nanoparticles (Ag NPs) layer thickness towards properties of black silicon (b-Si) fabricated by two-step metal-assisted chemical etching for potential application in photovoltaic (PV) devices. Ag NPs with different layer thicknesses (1.3-5.1 µm) are deposited on monocrystalline silicon (mono c-Si) wafers by electroless chemical deposition in AgNO 3 /HF aqueous solution for 10-40 s. This is followed by etching in HF:H 2 O 2 :DI H 2 O aqueous solution for 20 s. Surface morphological investigation confirms presence of b-Si nanowires with height of 250-577 nm and diameter of 100-200 nm. The b-Si nanowires suppress broadband reflectance from the wafers over 300-1100 nm wavelength region, due to refractive index grading effect. Sample with Ag NPs layer thickness of 5.1 µm exhibits b-Si nanowires with average height of 577 nm and average diameter of 200 nm after etching. This sample demonstrates the lowest weighted average reflectance of 5.5% compared to other samples. This sample exhibits absorption of 96.5% at wavelength of 600 nm. The enhanced broadband light absorption leads to maximum potential short-circuit current density (J sc(max)) of 39.7 mA/cm 2 , or 51% relative enhancement compared to planar reference sample.

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Section: Resultsmentioning

confidence: 99%

Effects of silver nanoparticles layer thickness towards properties of black silicon fabricated by metal-assisted chemical etching for photovoltaics

2020

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“…Among different light management strategies, anti-reflective coatings, − textured surfaces, , plasmonic, − or light scattering layers are used in photovoltaic devices. Photonic crystals (PCs) have also attracted particular attention because of their unique ability to mold the flow of light. − The photonic band structure allows to control light collection and emission of the devices, notably through photonic band gaps or quasi-guided mode excitation presenting a Fano resonance lineshape. ,− In the case of MAPbI 3 -based PSCs, enhancing light harvesting efficiency in the long-wavelength range is particularly important because light absorption of MAPbI 3 typically decreases between 500 and 800 nm. , …”

Section: Introductionmentioning

confidence: 99%

Inverse Opal Photonic Nanostructures for Enhanced Light Harvesting in CH₃NH₃PbI₃ Perovskite Solar Cells

Daem

Mayer

Spronck

et al. 2022

ACS Appl. Nano Mater.

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Light management strategies using photonic crystals have been proven to efficiently improve light harvesting and subsequently conversion efficiency of various optoelectronic devices. This study focuses on 3D inverse opal CH 3 NH 3 PbI 3 photoanodes in perovskite solar cells from a combined numerical and experimental approach. Varying the pore size and the layer thickness in numerical simulations, we first determined theoretical optimum from a purely optical point of view. Corresponding 3D inverse opal photonic nanostructures were then fabricated through spin-coating protocols using polystyrene nanospheres of various diameters as hard templating sacrificial agents. It demonstrates how the photonic nanostructuration of the perovskite layer impacts both optical and electronic properties of experimental samples. Regarding the individual 3D inverse opal perovskite layers, an optimum of light absorption is reached for an ∼500 nm diameter pore photonic nanostructure, with a photonic absorption enhancement as high as 16.1% compared to an unstructured compact benchmark. However, in addition to electronic-related countereffects, local light absorption in the hole transporting material is observed in assembled solar cells, weakening the light management benefits of the perovskite layer nanostructuration to only ∼3% photonic enhancement.

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“…In order to obtain better performance in various optoelectronic and photodetection applications many researchers have been focused on texturing the surface of silicon with nanostructures (such as nanocones, NWs, etc.). One dimensional (1-D) SiNWs have enhanced light absorption capability and received increasing research interest because of their higher surface-to-volume ratio, strong light trapping effect, fast charge transport, and high charge collection efficiency by shortening the carrier transport path in comparison to bulk Si. , Thus, changes in the length, diameter, and spacing of SiNWs developed after the etching process reveal improvement of material properties, such as light absorption and scattering, enhancement of surface built-in-field, , electron–hole recombination, quantum confinement, and so forth. This leads to the enhanced application in photodetectors, − photovoltaics high sensitivity sensors, , field-effect-transistors, , thermoelectric devices, super capacitors, and so on.…”

Section: Introductionmentioning

confidence: 99%

“…One dimensional (1-D) SiNWs have enhanced light absorption capability and received increasing research interest because of their higher surface-to-volume ratio, strong light trapping effect, fast charge transport, and high charge collection efficiency by shortening the carrier transport path in comparison to bulk Si. , Thus, changes in the length, diameter, and spacing of SiNWs developed after the etching process reveal improvement of material properties, such as light absorption and scattering, enhancement of surface built-in-field, , electron–hole recombination, quantum confinement, and so forth. This leads to the enhanced application in photodetectors, − photovoltaics high sensitivity sensors, , field-effect-transistors, , thermoelectric devices, super capacitors, and so on. Single-crystalline SiNWs can be synthesized via reactive-ion-etching (RIE) or vapor–liquid–solid (VLS) methods in gas phase and metal-assisted chemical etching (MACE) in the solution process.…”

Section: Introductionmentioning

confidence: 99%

Silicon Nanowire Arrays with Nitrogen-Doped Graphene Quantum Dots for Photodetectors

Mondal

Dey

Basori

2021

ACS Appl. Nano Mater.

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A significantly improved silicon nanowire (SiNW)based broadband photodetector is obtained in this work using the core−shell structure of SiNWs with hydrothermally processed nitrogen doped graphene quantum dots (N-GQDs). The performance of the photodetector device is enhanced significantly by enlarging the effective surface area of the SiNW/N-GQD heterostructure by controlled KOH etching of SiNWs. In combination with SiNWs, low-cost hydrothermal processed N-GQDs are used as a light absorber in the UV region and also as an emitter in the visible region which is reabsorbed by the SiNWs to enhance the device performance. The SiNW/N-GQD heterostructure photodetector exhibits a large photocurrent to dark-current ratio (∼0.8 × 10 2 under zero bias and as high as ∼0.5 × 10 4 under −2 V bias for 2 min KOH etching), remarkably low dark current (∼55 nA under −2 V bias for 2 min KOH etching and is six orders lower compared to control SiNWs device), and significantly improved external quantum efficiency (EQE) exceeding 150% in the near IR and ∼500% at 460 nm wavelength in the visible region. Such higher EQE may arise due to the (i) enhanced optical absorption, (ii) suppressed dark current, (iii) photomultiplication of charge carriers because of the presence of trap states, and (iv) improved carrier transport and collection efficiency due to core−shell structure and nanoscale morphology control. It is expected that the reported SiNWs/N-GQDs core−shell heterostructure device might be useful for high-performance optoelectronic applications in the near future.

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Impact of micro-texturization on hybrid micro/nano-textured surface for enhanced broadband light absorption in crystalline silicon for application in photovoltaics

Cited by 32 publications

References 33 publications

Effects of silver nanoparticles layer thickness towards properties of black silicon fabricated by metal-assisted chemical etching for photovoltaics

Effects of silver nanoparticles layer thickness towards properties of black silicon fabricated by metal-assisted chemical etching for photovoltaics

Inverse Opal Photonic Nanostructures for Enhanced Light Harvesting in CH₃NH₃PbI₃ Perovskite Solar Cells

Silicon Nanowire Arrays with Nitrogen-Doped Graphene Quantum Dots for Photodetectors

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Impact of micro-texturization on hybrid micro/nano-textured surface for enhanced broadband light absorption in crystalline silicon for application in photovoltaics

Cited by 32 publications

References 33 publications

Effects of silver nanoparticles layer thickness towards properties of black silicon fabricated by metal-assisted chemical etching for photovoltaics

Effects of silver nanoparticles layer thickness towards properties of black silicon fabricated by metal-assisted chemical etching for photovoltaics

Inverse Opal Photonic Nanostructures for Enhanced Light Harvesting in CH3NH3PbI3 Perovskite Solar Cells

Silicon Nanowire Arrays with Nitrogen-Doped Graphene Quantum Dots for Photodetectors

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Inverse Opal Photonic Nanostructures for Enhanced Light Harvesting in CH₃NH₃PbI₃ Perovskite Solar Cells