2023
DOI: 10.1021/acs.chemmater.3c00780
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Impact of Low-Temperature Seed-Assisted Growth on the Structural and Optoelectronic Properties of MAPbBr3 Single Crystals

Abstract: This work presents a detailed investigation of seed and nucleation-assisted growth methods for the inverse temperature crystallization (ITC) of methyl­ammonium lead bromide single crystals. We have demonstrated that low-temperature seed-assisted growth results in significant improvements in both optical and electrical responses of the material compared to the nucleation-assisted growth. Specifically, the space charge limited current method reveals a reduced trap-filled limit voltage of 0.287 V for the seed-as… Show more

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Cited by 6 publications
(10 citation statements)
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“…The observed higher I d may primarily suggest the presence of a high defect density in the BMIB-based MAPbBr 3 SC. 38,50 However, our results reveal that the values of Z trap are lower in the BMIBbased MAPbBr 3 SC than in the reference MAPbBr 3 SC (Fig. 2e).…”
Section: Resultsmentioning
confidence: 65%
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“…The observed higher I d may primarily suggest the presence of a high defect density in the BMIB-based MAPbBr 3 SC. 38,50 However, our results reveal that the values of Z trap are lower in the BMIBbased MAPbBr 3 SC than in the reference MAPbBr 3 SC (Fig. 2e).…”
Section: Resultsmentioning
confidence: 65%
“…2b, the PL spectra exhibit a sharp peak at 542 nm (2.29 eV) with no shift in the peak position, which is consistent with the literature. 38,50 Notably, the BMIB-based MAPbBr 3 SC exhibited an enhanced PL intensity compared to the reference MAPbBr 3 SC, which indicates suppression of the nonradiative recombination in the modified SC. These results further support our findings from the XRD analysis.…”
Section: Resultsmentioning
confidence: 98%
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“…The devices for PV-SCLC measurements were prepared by depositing carbon paste on each surface of the MAPbBr 3 crystals . Then, pulsed voltages of 0.05–200 V were applied to the devices with the ON-time of 20 ms and the interval time of 120 s. Based on the log I –log V plots, we determined the onset voltage of the trap-filled limit regime ( V TFL ) as shown in Figures S8 and S9.…”
Section: Methodsmentioning
confidence: 99%