Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO

Abstract

The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe (110)

Tunnel Magnetoresistance and Temperature Related Effects in Magnetic Tunnel Junctions with Embedded Nanoparticles

“…1(b) and Fig. 1(c 10 The first term has a simple form (1) and represents simple approach which can be used also for description of the direct electron tunneling in MTJs [5][6][7][8][9] In case of symmetric nonmagnetic a -spot contact 2) were simplified in the limit of the nonmagnetic symmetric a-spot contact: …”

“…The developed technique is very promising and can be conjugated with the first principal calculations 7 and consistent with simulations of the planar tunnel junctions. 8,9…”

Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

“…The electron transport model through the NP is similar to that for the double barrier magnetic tunnel junction (DMTJ). This model has a long history of applications 16 28 29 30 31 32 and development 33 34 35 36 . This theoretical works described the electron transport through a nanojunction between two different ferromagnetic leads taking into account the spin-dependent momentum conservation law.…”

“…For example abinitio calculation of the density of states was performed for TMR simulation in ref. 36 .…”

Temperature-induced variation of magnetoresistance and tunneling current in La2/3Sr1/3MnO3/LaMnO3 (ZrO2)/La2/3Sr1/3MnO3 junctions

“…The tunneling magnetoresistance (TMR) is usually defined via the difference in resistances between the antiparallel and parallel arrangements of the electrodes' magnetic moments. Halfmetals, such as LSMO, with an intrinsic nearly full magnetization, are ideal material for device applications [10,25], and so far, LSMO-based MTJs have shown highest TMR [26][27][28][29][30]. However, some interfacial layer in manganite-based devices such as MTJs will severely depress the magnetic field effects [31][32][33][34].…”