2011 37th IEEE Photovoltaic Specialists Conference 2011
DOI: 10.1109/pvsc.2011.6186237
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Impact of laser hole drilling on the breakage rate of multicrystalline silicon wafers

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“…Lee et al 45 used a single-mode Q-switched UV (355 nm) laser with a pulse duration of 40 ns for drilling holes for MWT silicon solar cells. Mingirulli et al 46 used both a Nd:YAG laser (1064 nm wave length) with pulse durations in the range of 60-90 μ s and a Yb:YAG laser (1030 nm wave length) with a pulse duration of 1 μ s to drill holes in Si wafers for EWT silicon solar cells.…”
Section: Laser Drillingmentioning
confidence: 99%
“…Lee et al 45 used a single-mode Q-switched UV (355 nm) laser with a pulse duration of 40 ns for drilling holes for MWT silicon solar cells. Mingirulli et al 46 used both a Nd:YAG laser (1064 nm wave length) with pulse durations in the range of 60-90 μ s and a Yb:YAG laser (1030 nm wave length) with a pulse duration of 1 μ s to drill holes in Si wafers for EWT silicon solar cells.…”
Section: Laser Drillingmentioning
confidence: 99%