Impact of Iron Surface Contamination on the Lifetime Degradation of Samples Passivated by Fired Al $_{\bf 2}$O$_{\bf 3}$/SiN$_{\bm x}$ Stacks

Breitenstein, Lena; Schön, Jonas; Schubert, Martin C.; Warta, Wilhelm

doi:10.1109/jphotov.2013.2259895

Cited by 2 publications

(3 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Note that the classical Sah-Noice-Shockley J 02 current is negligibly small for usual lifetimes in silicon. [65] Measurable J 02 currents in solar cells flow only in positions where extended defects, like scratches or the cell edge, cross the pn-junction. [65,66] Therefore the J 02 distribution should be dissimilar to the J 01 distribution, and in most cases it is.…”

Section: Dlit Resultsmentioning

confidence: 99%

“…[65] Measurable J 02 currents in solar cells flow only in positions where extended defects, like scratches or the cell edge, cross the pn-junction. [65,66] Therefore the J 02 distribution should be dissimilar to the J 01 distribution, and in most cases it is. [29,35,44] We believe that for the PERC cell investigated here, which shows an extremely high ratio of local dark current densities (factor 20), the RESI-R s concept, based on the model of independent diodes, leads to some errors in attributing currents to J 01 and J 02 contributions.…”

Section: Dlit Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Advanced Local Characterization of Silicon Solar Cells

Breitenstein

Frühauf

Bauer

2017

Physica Status Solidi (a)

View full text Add to dashboard Cite

Solar cells made from multicrystalline silicon material, which still represent the majority of solar cells produced today, are by nature inhomogeneous devices. Their bulk excess carrier lifetime, which decisively influences the short circuit current density, the saturation current density, and the effective bulk diffusion length, may vary from position to position by an order of magnitude or more. Moreover, such cells may contain ohmic shunts and, in particular in the edge regions, positions of significant depletion region recombination current. The classical local characterization method for solar cells is light beam‐induced current (LBIC) mapping. This method does not give direct information on factors influencing the dark current density. A reliable quantitative local characterization of inhomogeneous cells can be performed by combining dark lock‐in thermography (DLIT) with electro‐ and photoluminescence (EL and PL) imaging. In this contribution, the well‐established and the most recent findings on the application of these methods are reviewed and typical application examples are presented. It is shown that luminescence imaging is most appropriate for local series resistance imaging and for qualitatively imaging of all kinds of recombination‐active defects. DLIT, on the other hand, shows a lower spatial resolution, but is most appropriate for imaging local two‐diode parameters like depletion region‐ and bulk saturation current densities, the latter allowing to draw conclusions also to the local short circuit current density. A comprehensive local characterization of silicon solar cells is possible by applying both DLIT and luminescence imaging, which complement each other.

show abstract

Section: Dlit Resultsmentioning

confidence: 99%

Section: Dlit Resultsmentioning

confidence: 99%

Advanced Local Characterization of Silicon Solar Cells

Breitenstein

Frühauf

Bauer

2017

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Surface passivation and P-diffusion have been widely used as standard industrial technique procedure to manufacture a solar cell with high conversion efficiency on p-Si wafer. In addition to the formation of the emitter of the cell, P-diffusion is also effective in removing residual iron in the bulk p-Si by a gettering effect [1,2] . This gettering effect is important, since iron is a lifetime killer [3,4] at a concentration as low as 10 10 -10 11 cm −3 in silicon and its contamination at this level is unavoidable in the process of crystal growth and wafer manufacture.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of c-Si solar cell by a combination of SiN_x/SiO_xpassivation and double P-diffusion gettering treatment

Chen¹,

Zhao²,

Zhou³

et al. 2017

J. Semicond.

View full text Add to dashboard Cite

SiNx/SiOx passivation and double side P-diffusion gettering treatment have been used for the fabrication of c-Si solar cells. The solar cells fabricated have high open circuit voltage and short circuit current after the double P-diffusion treatment. In addition to better surface passivation effect, SiNx/SiOx layer has lower reflectivity in long wavelength range than conventional SiNx film. As a consequence, such solar cells exhibit higher conversion efficiency and better internal quantum efficiency, compared with conventional c-Si solar cells.

show abstract

Impact of Iron Surface Contamination on the Lifetime Degradation of Samples Passivated by Fired Al $_{\bf 2}$O$_{\bf 3}$/SiN$_{\bm x}$ Stacks

Cited by 2 publications

References 16 publications

Advanced Local Characterization of Silicon Solar Cells

Advanced Local Characterization of Silicon Solar Cells

Performance improvement of c-Si solar cell by a combination of SiN_x/SiO_xpassivation and double P-diffusion gettering treatment

Contact Info

Product

Resources

About

Impact of Iron Surface Contamination on the Lifetime Degradation of Samples Passivated by Fired Al $_{\bf 2}$O$_{\bf 3}$/SiN$_{\bm x}$ Stacks

Cited by 2 publications

References 16 publications

Advanced Local Characterization of Silicon Solar Cells

Advanced Local Characterization of Silicon Solar Cells

Performance improvement of c-Si solar cell by a combination of SiNx/SiOxpassivation and double P-diffusion gettering treatment

Contact Info

Product

Resources

About

Performance improvement of c-Si solar cell by a combination of SiN_x/SiO_xpassivation and double P-diffusion gettering treatment