Impact of iron atoms on electronic properties of FZ n-Si with dislocations

Nucleation of Nickel Disilicide Precipitates in Float‐Zone Silicon: The Role of Vacancies

“…[ 42 ] Such defects have been discussed in relation to nickel‐related defects observed after electron irradiation [ 43 ] and also for iron‐related species after plastic deformation. [ 44 ] One may speculate that adding another interstitial impurity atom to such defects could catalyze the collapse of one of the interstitial metal atoms into the vacancy leading to a similar situation as discussed here. It remains open, however, whether such complexes could be stable at higher temperature.…”

Dislocations in Crystalline Silicon Solar Cells

“…[47] DLTS combined with LBIC can also recognize the electroactive defects, such as vacancies generated from dislocation movement, in silicon and the recombination properties associated with dislocations under the influence of metallic impurities, such as Fe. [48,49] Hence, it can be seen that these measurement methods combined with multiple techniques may reveal the optical and electrical behavior of dislocations. Sarau et al have used a technique that combines micro-Raman, EBIC, defect etching, and EBSD to study internal stress and successfully explained the effects of these defects on stress that could not be clearly revealed by a single technique.…”

“…[46,71] Dislocations, combined with Fe atoms that diffused into the device, increase hole-electron recombination due to the diffusion of Fe atoms, forming deep impurity levels in the bandgap. [49] However, different forms of impurities render different degrees of influence and precipitated Fe atoms exhibit a lesser impact on carrier lifetime degradation than interstitial Fe atoms in polycrystalline silicon. [72] Ni atoms produce deep energy levels in dislocations; however, all nickel atoms are not collected by dislocations.…”

“…[ 47 ] DLTS combined with LBIC can also recognize the electroactive defects, such as vacancies generated from dislocation movement, in silicon and the recombination properties associated with dislocations under the influence of metallic impurities, such as Fe. [ 48,49 ]…”