Impact of intrinsic defects on excitation dependent carrier lifetime in thick 4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques

Competing Energy Scales and Phase Separation in Topological Superconductor Sn0.4Sb0.6 Alloys: Temperature- and Excitation-Dependent Ultrafast Pump–Probe Studies

“…Consequently, an adjustment is made by introducing a three-lifetime model consisting of t 1 , t 2 , and t 3 . The inclusion of an additional lifetime, observed as excitation energy increases, can be attributed to several factors such as increase in trapping carrier concentration due to defects, , incorporation of additional excited states, and the pronounced impact of band-filling effects . In this refined model, t 1 continues to account for the rapid relaxation of carriers from excited states primarily mediated through metallic channels.…”

Thermal coupled photoconductivity as a tool to understand the photothermal catalytic reduction of CO2

“…It is due to the structural difference between the H2-350 sample and the Unannealed and H2-150 samples that a higher content of Ov is present in H2-350 [41][42][43]. When considering the energy required for electron detrapping from the defect state to the conduction band by thermal excitation, the electrons trapped at a shallow level rather than a deep level are most likely to be excited to the conduction band [44][45][46]. It is well known that CO2 reduction is a multi-electron reduction process.…”