2015
DOI: 10.7567/jjap.54.04dd10
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Impact of inserted Ta ultrathin layer and postdeposition annealing on the forming voltage of Ir/Ti/Ta/HfO2/TiN/Ti/SiO2/Si resistive switching devices

Abstract: We fabricated resistive switching (RS) devices that possess the Ir/Ti/Ta/HfO2/TiN/Ti/SiO2/Si structure with different Ta and Ti layer thicknesses by a magnetron sputtering method. The lowering of forming voltage was observed when the combination of Ti and Ta layer thicknesses was Ti (45 nm)/Ta (5 nm) and the device was annealed after the deposition of the top electrode. In this sample, the migration of oxygen ions from the HfO2 layer to the Ti layer through the Ta layer upon thermal annealing was confirmed by … Show more

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