Impact of in-plane currents on magnetoresistance properties of an exchange-biased spin valve with an insulating antiferromagnetic layer

Dai, N. V.; Thuan, Nguyen Chi; Hong, Le Van; Phuc, N.X.; Lee, Y. P.; Wolf, Stuart A.; Nam, D. N. H.

doi:10.1103/physrevb.77.132406

Cited by 28 publications

(13 citation statements)

References 17 publications

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“…8 Several experiments have observed that electrical current influences the exchange bias. 9,10,11,12,13,14 This provides indirect evidence that a spin-polarized current can influence antiferromagnets. However, the exact origin of the observed effect is not clear since exchange bias is a complex and not completely understood phenomenon.…”

Section: Nonrelativistic Spintronics Effectsmentioning

confidence: 93%

Spin transport and spin torque in antiferromagnetic devices

et al. 2018

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Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

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Section: Nonrelativistic Spintronics Effectsmentioning

confidence: 93%

Spin transport and spin torque in antiferromagnetic devices

et al. 2018

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“…The results of Dai et al [36] indicate that Joule heating plays a major role in the CIP-MR measurements of their EBSV. They used a standard four-probe method to measure the CIP-MR of sputtered AFM/F/N/F spin valves with AFM = 40 nm of NiCoO, pinned F = 3 nm of CoFe, N = 3.8 nm of Cu and free F = 4.5 nm of CoFe.…”

Section: Initial Experiments: Antiferromagnetic Spin-transfer Torque-current-in-plane Experimentsmentioning

confidence: 97%

Antiferromagnetic metal spintronics

MacDonald

Tsoi

2011

Phil. Trans. R. Soc. A.

303

255

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In this brief review, we explain the theoretical basis for the notion that spin-transfer torques (STTs) and giant-magnetoresistance effects can, in principle, occur in circuits containing only normal and antiferromagnetic (AFM) materials, and for the notion that antiferromagnets can play a role in STT phenomena in circuits containing both ferromagnetic and AFM elements. We review the experimental literature that provides partial evidence for these AFM spintronic effects but demonstrates that, like exchangebias effects, they are sensitive to details of interface structure that are not always under experimental control. Finally, we speculate briefly on some strategies that might advance progress.

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“…Furthermore, nonuniform current flows inherent to the point-contact technique (Wei et al, 2007) give only a qualitative picture. In addition experiments are sometimes perturbed by unstable antiferromagnetic configurations (Urazhdin and Anthony, 2007) or reconfiguration originating from Joule heating and not spin-transfer torque (Tang et al, 2007(Tang et al, , 2010Dai et al, 2008). New experimental geometries and stacks symmetries need to be proposed to obtain quantitative data.…”

Section: Seeking Spin-transfer Torque Experimentallymentioning

confidence: 99%

Antiferromagnetic spintronics

et al. 2018

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Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

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Impact of in-plane currents on magnetoresistance properties of an exchange-biased spin valve with an insulating antiferromagnetic layer

Cited by 28 publications

References 17 publications

Spin transport and spin torque in antiferromagnetic devices

Spin transport and spin torque in antiferromagnetic devices

Antiferromagnetic metal spintronics

Antiferromagnetic spintronics

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