Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study

Karbalaei, Mohammad; Dideban, Daryoosh; Heidari, Hadi

doi:10.1016/j.rinp.2019.102823

Cited by 18 publications

(3 citation statements)

References 52 publications

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“…Impact of gate dielectric material.-High-k gate dielectric material reduces leakage current and improves electrostatic control of the gate terminal in aggressively scaled devices. However, their influence on device performance depends on the transport mechanism, 30 gate structure, 31 device dimensions 32 and channel material 33 of the transistor. In our model, the dielectric constant, k is varied between 3.9 (SiO 2 ) to 24 (HfO 2 ) which correspond to the commonly found dielectrics with lowest and the highest k-value, respectively.…”

Section: Resultsmentioning

confidence: 99%

Influence of Device Parameters on Performance of Ultra-Scaled Graphene Nanoribbon Field Effect Transistor

Hasan

Nishat

Hossain

et al. 2020

ECS J. Solid State Sci. Technol.

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Recent advances in graphene nanoribbon (GNR) field-effect transistors (FETs), with finite band-gap, have shown great promise for their use in ultra-scaled, low power and high speed device applications. Here, we use quantum mechanical simulations, based on non-equilibrium Green’s function (NEGF), to study the electrical characteristics of a sub-10 nm gate length GNRFET with double gate structure. Tight-binding approximation is used to extract the energy bands of GNR and the results are validated with density functional theory (DFT) calculations. Key electrical parameters are computed for different dielectric material, source/drain doping and temperature combining the channel length scaling beyond 10 nm to study performance variation. Results reveal that change in source/drain doping shows significant impact on performance for shorter channel, while the opposite tendency is observed for dielectric constant (k) variation. GNRFET showed robustness against temperature variation compared to conventional Si devices. Finally, the results were benchmarked against the performance metrics of high performance and low power CMOS devices in the 5-nm technology node. A significant rise in leakage current beyond the LP requirement was observed for gate lengths below 5 nm. Results obtained from this study can provide useful insights in the design and implementation of next generation GNRFETs.

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Section: Resultsmentioning

confidence: 99%

Influence of Device Parameters on Performance of Ultra-Scaled Graphene Nanoribbon Field Effect Transistor

Hasan

Nishat

Hossain

et al. 2020

ECS J. Solid State Sci. Technol.

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“…Any variations in these processes can lead to defects and impact transistor performance. The gate dielectric is a critical component in transistor performance [161]. Achieving a high-quality gate dielectric with low leakage and high capacitance is challenging.…”

Section: Practical Challenges Of Gaa Mbcfet Fabrication Technologymentioning

confidence: 99%

FinFET to GAA MBCFET: A Review and Insights

Das,

Rajalekshmi,

James

2024

IEEE Access

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This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures. This article provides a concise yet insightful overview of the development of FinFET, exploring modified architectures, current trends, and associated constraints. The growing importance of other semiconductor materials instead of Si in FinFET or other technologies has been studied in detail. The article explores an emerging technology called 'GAA MBCFET', highlighting its advantages over FinFET. It also delves into the notable drawbacks and complex fabrication challenges associated with the upcoming GAA MBCFET technology. INDEX TERMS Gate-All-Around (GAA), Multi-Bridge Channel (MBC), Silicon on Insulator (SOI)

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“…The thickness of gate oxide has also become thinner as the gate length is shortened. The power consumption and joule heat problems due to a rapid increase in gate leakage current are caused for SiO 2 , the gate oxide film material that has been used so far [17][18][19]. Using a high-k dielectric has the advantage of obtaining an equivalent oxide thickness (EOT) that is inversely proportional to the permittivity of the high-k material.…”

Section: Introductionmentioning

confidence: 99%

Impact of Gate Metal Work-function for On-to-off Current Ratio and Threshold Voltage in Junctionless Gate-All-Around (GAA) MOSFET Stacked with SiO2 and High-k Dielectric

Jung¹

2023

IJETAE

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The relationship among the on-to-off current ratio, threshold voltage, and the gate metal work-function is investigated for a junctionless (JL) Gate-All-Around (GAA) MOSFET with a gate oxide film in which SiO2 and a high-k dielectric material are stacked. The JL structure works in the accumulation state, and the threshold voltage is defined as the gate voltage when the minimum potential in the channel becomes Fermi potential. The on-to-off current ratio Ion/Ioff is obtained by obtaining on-current Ion at the threshold voltage and off-current Ioff at the gate voltage of 0 V. As a result, if the channel doping concentration and silicon radius are increased to reduce the channel resistance, the on-to-off current ratio decreases along with the threshold voltage, but this problem can be solved through the increasing of the gate metal workfunction. In addition, even when the relative permittivity of the high-k dielectric is increased from 3.9 to 20, the gate metal work-function to maintain any on-to-off current ratio and threshold voltage is very slightly changed. Therefore it will be possible to improve the controllability of the gate by increasing the permittivity of the high-k dielectric without change in the work-function. The reduction of the channel resistance of the JL GAA MOSFET is possible with the stacked gate oxide while maintaining a reasonable on-to-off current ratio and threshold voltage by adjusting the gate metal work-function

show abstract

Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study

Cited by 18 publications

References 52 publications

Influence of Device Parameters on Performance of Ultra-Scaled Graphene Nanoribbon Field Effect Transistor

Influence of Device Parameters on Performance of Ultra-Scaled Graphene Nanoribbon Field Effect Transistor

FinFET to GAA MBCFET: A Review and Insights

Impact of Gate Metal Work-function for On-to-off Current Ratio and Threshold Voltage in Junctionless Gate-All-Around (GAA) MOSFET Stacked with SiO2 and High-k Dielectric

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