Impact of HfO2 buffer layer on the electrical characteristics of ferroelectric/high-k gate stack for nonvolatile memory applications

Jha, Rajesh Kumar; Singh, Prashant; Kashniyal, Upendra; Goswami, Manish; Singh, Bhawna

doi:10.1007/s00339-020-03632-0

Cited by 4 publications

(1 citation statement)

References 34 publications

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“…The remnant polarization after removing the external electric field results in the non-volatile memory characteristics of ferroelectric memory. Ferroelectric materials such as Pb(Zr, Ti)O 3 (PZT), SrBi 2 Ta 2 O 9 (SBT), and BiFeO 3 (BFO) [9][10][11][12][13][14] have been used as the ferroelectric layer (FL) of FeRAMs. However, today there are some difficulties in the integration and storage density.…”

Section: Introductionmentioning

confidence: 99%

Phase transformation on HZO ferroelectric layer in ferroelectric random-access memory induced by x-ray irradiation

Wu,

Chen,

Chang

et al. 2024

Semicond. Sci. Technol.

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In this study, electrical measurements on ferroelectric random-access memory (FeRAM) by prior X-ray irradiation are conducted. Compared with an unirradiated device, parameters such as current leakage and remnant polarization of the irradiated device were unexpectedly improved. Besides, better reliabilities including the number of endurance times and retention time have also been demonstrated. To clarify the underlying physical mechanism, the electrical properties are analyzed. The current-voltage curve (I-V) implies a change in the grain size in the ferroelectric layer, and the capacitance-voltage curve (C-V) profile indicates that the ferroelectric layer undergoes a phase change during irradiation. Finally, according to the electrical results, a physical model is proposed as an explanation.

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