Impact of gate dielectric on overall electrical performance of Quadruple gate FinFET

Toan, Ho Le Minh; Goswami, Rupam

doi:10.1007/s00339-021-05210-4

Cited by 4 publications

(1 citation statement)

References 33 publications

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“…HfO 2 has emerged as the most viable new-age replacement for SiO 2 and is the primary material under inspection in this research. [17][18][19] Incorporating high-k materials, such as HfO 2 , help reduce leakage current and increase gate capacitance, thus improving device performance. The device in contention features a dual-metal gate in a cylindrical structure.…”

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confidence: 99%

Exploration of Novel Hafnium Oxide (HfO₂) Based Plasma-Assisted Gate All Around Carbon Nanotube FET (GAA-CNTFET) for High Sensing Applications

Kansal¹,

Sharma²

2022

ECS J. Solid State Sci. Technol.

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The present research aims to implement a hafnium oxide (HfO2) based plasma-assisted gate all around carbon nanotube field effect transistor (GAA-CNTFET) and use it for a better understanding of plasma parameters and their effect on the device. With a more streamlined focus on plasma synthesized (plasma-enhanced chemical vapor deposition technique) CNT for channel material, the intention is to understand how the incorporation of high-k dielectrics leads to enhanced device performance. HfO2 is used as a high-k dielectric to overcome the limitations of conventional silicon dioxide (SiO2) gate dielectric. A comparative analysis has been performed, based on which it can be concluded that using HfO2 leads to improvement in all observed performance metrics; higher drain current, transconductance, output conductance, early voltage, and gate capacitance. Furthermore, by implementing a cavity in the oxide layer and utilizing the concept of dielectric modulation, it can be observed that tailoring the dielectric permittivity of the cavity affects and alters the device's performance characteristics. Better performance and high sensitivity are tilted towards a higher dielectric constant value. This analysis's results help quantify the practical usage of the device for sensing applications in biology, environment and other prominent industries.

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confidence: 99%

Exploration of Novel Hafnium Oxide (HfO₂) Based Plasma-Assisted Gate All Around Carbon Nanotube FET (GAA-CNTFET) for High Sensing Applications

Kansal¹,

Sharma²

2022

ECS J. Solid State Sci. Technol.

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Performance Evaluation & Linearity Distortion Analysis for Plasma- Assisted Dual-Material Carbon Nanotube Field Effect Transistor with a SiO2-HfO2 Stacked Gate-Oxide Structure (DM-SGCNFET)

Kansal

Sharma

2022

Silicon

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Fin core dimensionality and corner effect in dual core gate-all-around FinFET

Das,

Deb,

Goswami

et al. 2024

Microelectronics Journal

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Impact of gate dielectric on overall electrical performance of Quadruple gate FinFET

Cited by 4 publications

References 33 publications

Exploration of Novel Hafnium Oxide (HfO₂) Based Plasma-Assisted Gate All Around Carbon Nanotube FET (GAA-CNTFET) for High Sensing Applications

Exploration of Novel Hafnium Oxide (HfO₂) Based Plasma-Assisted Gate All Around Carbon Nanotube FET (GAA-CNTFET) for High Sensing Applications

Performance Evaluation & Linearity Distortion Analysis for Plasma- Assisted Dual-Material Carbon Nanotube Field Effect Transistor with a SiO2-HfO2 Stacked Gate-Oxide Structure (DM-SGCNFET)

Fin core dimensionality and corner effect in dual core gate-all-around FinFET

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Impact of gate dielectric on overall electrical performance of Quadruple gate FinFET

Cited by 4 publications

References 33 publications

Exploration of Novel Hafnium Oxide (HfO2) Based Plasma-Assisted Gate All Around Carbon Nanotube FET (GAA-CNTFET) for High Sensing Applications

Exploration of Novel Hafnium Oxide (HfO2) Based Plasma-Assisted Gate All Around Carbon Nanotube FET (GAA-CNTFET) for High Sensing Applications

Performance Evaluation & Linearity Distortion Analysis for Plasma- Assisted Dual-Material Carbon Nanotube Field Effect Transistor with a SiO2-HfO2 Stacked Gate-Oxide Structure (DM-SGCNFET)

Fin core dimensionality and corner effect in dual core gate-all-around FinFET

Contact Info

Product

Resources

About

Exploration of Novel Hafnium Oxide (HfO₂) Based Plasma-Assisted Gate All Around Carbon Nanotube FET (GAA-CNTFET) for High Sensing Applications

Exploration of Novel Hafnium Oxide (HfO₂) Based Plasma-Assisted Gate All Around Carbon Nanotube FET (GAA-CNTFET) for High Sensing Applications