Impact of focused ion beam assisted front end processing on n-MOSFET degradation

Photoluminescence Manipulation by Ion Beam Irradiation in CsPbBr3 Halide Perovskite Single Crystals

“…The most widely used ion sources provide 30 keV Ga + ion beams focused onto 10 nm spots and 35 keV He + ions focused onto sub-nanometer-size spots. , Despite the convenience of such ion beams for nanolithography, their application in optoelectronics is rather limited because in traditional semiconductors such as silicon and gallium arsenide, the ion–solid interaction results in the creation of defects serving as non-radiative recombination centers. Their generation leads to the deterioration of both electronic properties, such as, the carrier mobility decay, , and optical properties, such as PL quenching and exciton resonances broadening . The examples of successful applications of ion irradiation for optoelectronics include quantum well intermixing and the fabrication of resonant diffractive optical elements …”

Post-Process CMOS Front End Engineering With Focused Ion Beams

“…When the ion beam strikes the fully featured wafer, Ga + ions are implanted in the passivation layer. In combination with the extraction of secondary electrons the deposited positive charge modifies the physical properties of the dielectric layer, while a leakage current appears and changes the performance of underlying transistors [5]. Milling a 1.6 µm deep trench as depicted in Fig.1 leads to a significant increase of the off-state leakage current accompanied by a stretchout of the threshold voltage (Fig.…”

“…The starting point of the milling process is accompanied by a tiny increase of the output current due to positive charging of the passivation layer. The periodic fluctuations of the drain current in this regime are a result of the milling strategy [5]. Every 6 seconds the beam is blanked, the charge deposited on the passivation tends to dissipate and the output current decreases.…”

Simulation of Focused Ion Beam Induced Damage Formation in Crystalline Silicon

“…The data used in this work are a TEM cross section and the number of defects in the channel as measured by the CP technique. Further experimental details can be found in [2,3].…”

“…While charging effects can be avoided by properly connecting the terminals of active devices during exposure [2], beam induced crystal damage represents a fundamental limit to circuit modification by FIB. We have previously characterized the spatial extent of FIB-induced crystal damage by milling trenches into the gate stack of MOSFETs, combined with in-situ monitoring of the drain current and intermitting charge pumping (CP) measurements as well as transmission electron microscopy (TEM) [2,3]. In the present paper, we compare these results with binary collision (BC) simulations, interprete the results, and discuss the accuracy of both measurements and simulations.…”