Impact of Duty Cycle and Junction Temperature on Dynamic Threshold Drift of SiC MOSFET

Xu, Chao; Zhong, Xiaohan; Jiang, Huaping; Qiu, Guanqun; Tang, Lei; Li, Ran

doi:10.1109/ceepe51765.2021.9475706

Cited by 6 publications

(2 citation statements)

References 18 publications

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“…The authors speculated that positive charges trapped during the application of a negative bias temporarily decrease the capture activation energy for negative charges, once the MOSFET is turned on. Besides this study, Xu et al found a negligible duty cycle dependence [6] and Tang et al studied the impact of switching stress on the forward voltage of the body diode [7]. Furthermore, Zhong et al discussed the voltage level dependence, undershoots and overshoots, and confirmed the independence of the duty cycle [8,9].…”

Section: Introductionmentioning

confidence: 51%

On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs

Feil

Waschneck

Reisinger

et al. 2023

MSF

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Silicon carbide power metal-oxide semiconductor field-effect transistors (MOSFETs) are suitable for more compact and energy efficient electric power conversion, pushing forward numerous key technologies in emission-free mobility and green power generation. These applications require fast gate switching up to hundreds of kilohertz. Typically, to assure a clear turn-off state of the electron channel, a negative turn-off gate bias is used in conjunction with a positive turn-on gate bias. Recently, several reports have revealed a new and so far unknown degradation mechanism that emerges during such operation conditions in apparently all commercial silicon carbide MOSFETs. As this mechanism arises upon gate switching, the terms gate switching instability (GSI) and gate switching stress (GSS) for the mechanism and the associated stress, respectively, have been introduced.Here, we show that this degradation mechanism does not depend on the used frequency up to at least 2 MHz, but that it is actually related to the cumulative number of switching cycles. For this purpose, we performed measurements at various frequencies comprising ultra-fast in-situ measurements of the threshold voltage and pre- and post-stress characterization by impedance analysis. The results are important both for understanding the underlying physics and for developing a correct methodology for industrial device qualification.

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Section: Introductionmentioning

confidence: 51%

On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs

Feil

Waschneck

Reisinger

et al. 2023

MSF

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show abstract

“…When the duration of MOSFET operation in an active mode increases, the drain current of the MOSFET also increases. Consequently, an increase in the duty cycle results in a corresponding increase in the drain current, while a decrease in the duty cycle leads to a decrease in the drain current 21,32,[36][37][38][39][40]. Reference 34) explains that the correlation between the PWM duty cycle and Id (drain current) can be calculated by considering the internal characteristics of each MOSFET, as shown in Eq.…”

Section: Operation Principles and Methodsmentioning

confidence: 99%

A New Method of The Active Gate Driver for Current Balancing in The Parallel MOSFET Circuits

Meiyanto Eko Sulistyo,

Kaleg,

Damaris Adi Waskitho

et al. 2023

Evergreen

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MOSFETs are used in electronic circuits because they have high switching efficiency. Typically, MOSFETs are wired in parallel for applications that require high power. Theoretically, this circuit can multiply the current capability of parallel MOSFETs. However, even if all the MOSFETs in a parallel circuit have the same serial number and manufacturer, they might not necessarily have the same current characteristics. This could lead to issues with current imbalances, potentially causing harm to the MOSFETs, especially under severe circumstances. This study introduces a new Active Gate Driver (AGD) technique to balance the current in a parallel MOSFET circuit. The current difference can be used to modulate each MOSFET duty cycle. Specifically, the MOSFET with the smallest current capacity is configured as the Master, while the MOSFET following it is designated as the Slave. The interrupt time value for the duty cycle of each Slave MOSFET is influenced by the current differential between the Master and Slave. Consequently, different duty cycles for the Master and Slave MOSFETs can maintain the same current level. Based on the results of experiments conducted on three MOSFETs, it is evident that the AGD approach can effectively balance the current to an optimum level.

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Recent Developments in Understanding the Gate Switching Instability in Silicon Carbide MOSFETs

Feil,

Waschneck,

Reisinger

et al. 2023

2023 IEEE International Integrated Reliability Workshop (IIRW)

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Impact of Duty Cycle and Junction Temperature on Dynamic Threshold Drift of SiC MOSFET

Cited by 6 publications

References 18 publications

On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs

On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs

A New Method of The Active Gate Driver for Current Balancing in The Parallel MOSFET Circuits

Recent Developments in Understanding the Gate Switching Instability in Silicon Carbide MOSFETs

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