Impact of doping on the performance of p-type Be-doped Al 0.29 Ga 0.71 As Schottky diodes

Al-Ahmadi, Noorah Ahmed; Ebrahim, Fadiah A.; Al-Jawhari, Hala; Mari, Riaz Hussain; Henini, M.

doi:10.1016/j.moem.2017.06.001

Cited by 8 publications

(2 citation statements)

References 18 publications

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“…As can be seen IF/IR decreases exponentially as temperature increases. At room temperature IF/IR is about 170 as compared to 1480 for a similar sample but grown on (311)A GaAs substrate with a same doping concentration [19]. The plausible reason for the higher reverse current for sample grown on (100) can be explained by the higher trap concentrations as compared to (311)A GaAs orientation as indicated in the references [20,21].…”

Section: 1temperature Dependence Of 𝑰 − 𝑽 Characteristicsmentioning

confidence: 92%

Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy

Oussalah

Filali

Garoudja

et al. 2022

Microelectronics Journal

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Section: 1temperature Dependence Of 𝑰 − 𝑽 Characteristicsmentioning

confidence: 92%

Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy

Oussalah

Filali

Garoudja

et al. 2022

Microelectronics Journal

Self Cite

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“…Because the diode has n > 2 implies that the transport mechanism is not dominated by thermionic emission but through recombination at defects/states at the interface, tunneling through the interfacial layer or space charge current transport [27]. Because n generally decreases with thermal treatment, the fact that the diode's n seen in Table 3 does not change drastically with thermal treatment implies that higher temperatures are required [70]. All of the above diode parameters that are improved with annealing could be related to improved crystallinity of NiO:N and reduction of structural defects and consequently reduced NiO:N/TiO 2 interface states.…”

Section: Characterization Of the P-nio:n/n-tio2diodementioning

confidence: 99%

Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

et al. 2021

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Nickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) thin films with enhanced properties compared to those of the undoped NiO thin film. The NiO:N films were grown at room temperature by sputtering using a plasma containing 50% Ar and 50% (O2 + N2) gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, having a transmittance of less than 20%. Upon doping with nitrogen, the films became more transparent (around 65%), had a wide direct band gap (up to 3.67 eV) and showed clear evidence of indirect band gap, 2.50–2.72 eV, depending on %(O2-N2) in plasma. The changes in the properties of the films such as structural disorder, energy band gap, Urbach states and resistivity were correlated with the incorporation of nitrogen in their structure. The optimum NiO:N film was used to form a diode with spin-coated, mesoporous on top of a compact, TiO2 film. The hybrid NiO:N/TiO2 heterojunction was transparent showing good output characteristics, as deduced using both I-V and Cheung’s methods, which were further improved upon thermal treatment. Transparent NiO:N films can be realized for all-oxide flexible optoelectronic devices.

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Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode

Toumi

Ouennoughi

Weiß³

2021

Appl. Phys. A

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Impact of doping on the performance of p-type Be-doped Al 0.29 Ga 0.71 As Schottky diodes

Cited by 8 publications

References 18 publications

Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy

Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy

Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode

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