Impact of Device-to-Device Thermal Interference Due to Self-Heating on the Performance of Stacked Nanosheet FETs
M. Balasubbareddy,
K. Sivasankaran
Abstract:The stacked nanosheet field effect transistor (SNSHFET) exhibits superior electrostatic performance with its increased effective channel width. However, as the technology node progressing towards angstrom dimensions, self-heating became one of the major challenges in SNSHFETs due to their confined geometry. The self-heating impacts not only the respective device, but also its contiguous device on the same substrate. In this paper, the thermal impact of heat stacked nanosheet FET (He-FET) on proximal cool stack… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.