Impact of Device Parameters on Thermal Performance of High-Speed Oxide-Confined 850-nm VCSELs

Baveja, Prashant P.; Kögel, Benjamin; Westbergh, Petter; Gustavsson, Johan S.; Haglund, Åsa; Maywar, Drew N.; Agrawal, Govind P.; Larsson, Anders

doi:10.1109/jqe.2011.2176554

Cited by 19 publications

(9 citation statements)

References 21 publications

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“…At 25 °C the fundamental mode redshifts with 0.052 nm K −1 , while it redshifts with dissipated power by 0.61 nm mW −1 giving a thermal impedance of 11.8 K mW −1 , which is similar to the 10.7 K mW −1 of our previous silicon‐integrated surface‐emitting device with the same aperture diameter . The thermal impedance is ≈4 times higher than ordinary GaAs‐based oxide‐confined VCSELs and explains the early onset of thermal rollover in both these cases.…”

Section: Measurementssupporting

confidence: 75%

Vertical‐Cavity Silicon‐Integrated Laser with In‐Plane Waveguide Emission at 850 nm

Kumari

Haglund

Gustavsson

et al. 2018

Laser & Photonics Reviews

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A continuous‐wave electrically‐pumped short‐wavelength hybrid vertical‐cavity silicon‐integrated laser (VCSIL) with in‐plane emission into a silicon nitride (SiN) waveguide is experimentally demonstrated. The coupling from the vertical cavity into the in‐plane SiN waveguide is achieved by a weak grating on the SiN waveguide placed inside the cavity. The grating provides coupling, sets the polarization of the lasing output, and provides transverse mode control. A 5 µm oxide‐aperture diameter device with a threshold current of 1.1 mA produces 73 µW single‐sided waveguide‐coupled optical output power at 2.6 mA bias current at a wavelength of 856 nm and a side‐mode suppression ratio (SMSR) of 29 dB.

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Section: Measurementssupporting

confidence: 75%

Vertical‐Cavity Silicon‐Integrated Laser with In‐Plane Waveguide Emission at 850 nm

Kumari

Haglund

Gustavsson

et al. 2018

Laser & Photonics Reviews

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“…5 shows the measured thermal impedance of the VCSEL as a function of substrate temperature from 25 to 95 o C. The thermal impedance is extracted from LIV curve and the shift in the peak wavelength of the optical spectrum from 2 to 10mA. In making this measurement, a measured wavelength shift with temperature of 62pm/K was used which is consistent with the value reported in [30]. Over the measurement range of interest, the thermal impedance was found to increase by 24%.…”

Section: A Static Vcsel Characteristicssupporting

confidence: 68%

A 50 Gb/s NRZ Modulated 850 nm VCSEL Transmitter Operating Error Free to 90 °C

Kuchta

Rylyakov

Schow

et al. 2015

J. Lightwave Technol.

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We report on the properties of an 850nm VCSEL transmitter running at 50Gb/s with NRZ modulation from 30°C to 90°C. This is the highest transmitter operating temperature at 50Gb/s for a VCSEL link of any wavelength. This achievement is made possible by a combination of a high speed VCSEL design and driver and receiver circuits that incorporate equalization. Without equalization, the highest temperature attained with BER <1E-12 is 57°C.Index Terms-High-speed modulation, optical interconnects, semiconductor lasers, vertical cavity surface-emitting laser (VCSEL) 0733-8724 (c)

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“…In previous work, we found that VCSELs with a reduced reflectivity of the top DBR have a lower internal temperature, due to reduced internal optical absorption loss [12]. Here, the internal temperature difference between VCSEL A and D at the bias currents used for large signal modulation is estimated to be ~15°C.…”

Section: Vcsel Design and Static Performancementioning

confidence: 69%